Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Patrick M. Wallace"'
Publikováno v:
Materials Today: Proceedings. 14:38-42
Optically pumped Ge1-ySny lasers operating at low temperature have been recently demonstrated. This article reviews the challenges to efficient lasing that arise from the intrinsic properties of alloys in the Si-Ge-Sn system. The first such challenge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f6446569bb670c4c11391bc3bdd78a4
https://doi.org/10.1016/j.matpr.2019.05.048
https://doi.org/10.1016/j.matpr.2019.05.048
Publikováno v:
ACS Applied Materials & Interfaces. 10:37198-37206
We report a versatile chemical vapor deposition (CVD) method to dope Ge films with Ga atoms in situ over a wide concentration range spanning from 3 × 1018 to 2.7 × 1020 cm–3. The method introduces a stable and volatile Ga hydride [D2GaN(CH3)2]2 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7075132949640da88921fcf676de3994
https://doi.org/10.1021/acsami.8b10046
https://doi.org/10.1021/acsami.8b10046
Autor:
Patrick M. Wallace, John Kouvetakis, Chi Xu, Jose Menendez, Christian D. Poweleit, Patrick Sims
Publikováno v:
ACS Applied Materials & Interfaces. 9:35105-35113
Epitaxial synthesis of Ga(As1–xPx)Ge3 alloys on Si(100) substrates is demonstrated using chemical vapor deposition reactions of [D2GaN(CH3)2]2 with P(GeH3)3 and As(GeH3)3 precursors. These compounds are chosen to promote the formation of GaAsGe3 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c7832c61f03c28fef3f39dbd9d8187
https://doi.org/10.1021/acsami.7b09272
https://doi.org/10.1021/acsami.7b09272
Publikováno v:
Semiconductor Science and Technology. 35:085034
Low temperature chemical vapor deposition (CVD) using the Al(BH4)3 and PH3 precursors at ~ 600 °C produces pure and crystalline BP films directly on Si and on ZrB2 buffer layers with no sign of Al incorporation. The BP films on ZrB2 are fully epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bffa06e2a1ecfcd2e0d1e87ae3672b9
https://doi.org/10.1088/1361-6641/ab9325
https://doi.org/10.1088/1361-6641/ab9325
Publikováno v:
ECS Transactions. 69:147-156
The optical emission properties of Ge1-y Sny and Ge1-x-y Si x Sn y LEDs on Si(100) substrates are investigated by room temperature electroluminescence (EL). In the case of Ge1-y Sn y LEDs, the basic device architecture consists of a thick (1.0-1.5 μ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5867a7043cfa42e6a34ef4b53698cb4
https://doi.org/10.1149/06914.0147ecst
https://doi.org/10.1149/06914.0147ecst
Autor:
Toshihiro Aoki, Patrick M. Wallace, Ruben Favaro, John Kouvetakis, Chi Xu, Andrew Edward White, Jose Menendez, Patrick Sims
Publikováno v:
Chemistry of Materials. 27:3030-3039
Crystalline Al1–xBxPSi3 alloys (x = 0.04–0.06) are grown lattice-matched on Si(100) substrates by reactions of P(SiH3)3 and Al(BH4)3 using low pressure CVD. The materials have been characterized fo...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c997b4367836be397fe4a273f2f3124
https://doi.org/10.1021/acs.chemmater.5b00412
https://doi.org/10.1021/acs.chemmater.5b00412
Autor:
Christian D. Poweleit, John Kouvetakis, Jose Menendez, Chi Xu, Patrick M. Wallace, Shery L. Y. Chang, Dhruve A. Ringwala
Publikováno v:
Applied Physics Letters. 114:212104
Ge1−ySny alloys with compositions in the 0.15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::463eea8f74b28aed8b576a7eb8101a14
https://doi.org/10.1063/1.5100275
https://doi.org/10.1063/1.5100275
Publikováno v:
Semiconductor Science and Technology. 34:045014
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51a8a0bf6b73e8a1164ea0ae401014d9
https://doi.org/10.1088/1361-6641/ab0916
https://doi.org/10.1088/1361-6641/ab0916
Autor:
Chi Xu, Patrick M. Wallace, Jose Menendez, Bruce Claflin, John Kouvetakis, Patrick Sims, Christian D. Poweleit
Publikováno v:
Applied Physics Letters. 111:122101
Monocrystalline alloys of GaAs and Ge with compositions (GaAs)yGe5–2y have been synthesized following a chemical vapor deposition approach that promotes the incorporation of Ga and As atoms as isolated donor-acceptor pairs. The structural and optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a685840409aa1c4934d0f16f0e2c8a1a
https://doi.org/10.1063/1.5003345
https://doi.org/10.1063/1.5003345
Publikováno v:
Semiconductor Science and Technology. 32:025003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45b01701d1109b382b159794be3c39dc
https://doi.org/10.1088/1361-6641/32/2/025003
https://doi.org/10.1088/1361-6641/32/2/025003