Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Patrick Khoo"'
Autor:
Pik Kee Tan, Patrick Khoo, Yuzhe Zhao, Siong Luong Ting, Hao Tan, Pui Ying Yeo, Yanlin Pan, C. Q. Chen
Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
With continuous technology scaling of semiconductor devices, conventional physical failure analysis (PFA) techniques becomes more and more challenging with the increased number of transistors and layer stacks. This paper presents a new memory bit-cou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1fe84ff5ee139f5d8a0e8c2e4193469
https://doi.org/10.1109/ipfa47161.2019.8984871
https://doi.org/10.1109/ipfa47161.2019.8984871
Autor:
Zeng-Yuan Wu, Chor Shu Cheng, Tze Ho Chan, Sriram Balasubramanian, Patrick Khoo, Hari Balan, Thanh Hoa Phung
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
This work reports a 55nm planar-bulk automotive grade high density (HD) 0.425 $\mu$m2 SRAM cell for use in Ultra Low power (ULP) applications. Excellent Vmin of 0.68V for 95% limited Yield (LY) has been demonstrated on 16Mb array without the use of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26dea83bc2b4d94ae872afc43965f0b8
https://doi.org/10.1109/edtm.2019.8731313
https://doi.org/10.1109/edtm.2019.8731313
Autor:
Soh Yun Siah, L. Tee, S. M. Jung, Xinwang Liu, Y. Diao, J. C. Xing, K. L. Pey, Patrick Khoo, Danny Pak-Chum Shum, Cai Xinshu, Fan Zhang, Liu Guo Yong, N. Do, Fangxin Deng, Lemke Steven, Wang Chunming, Y. J. Kong, Zhiqiang Teo, K. Shubhakar, K. M. Tan, Parviz Ghazavi, L. Q. Luo, G. M. Lin, Khee Yong Lim, J.Q. Liu
Publikováno v:
2016 IEEE 8th International Memory Workshop (IMW).
This paper for the first time successfully demonstrates a Logic-compatible, highly reliable, automotive-grade 16Mb flash macro with self- aligned, split-gate FG-based flash cell embedded into a 40nm Low Power CMOS with copper low-K interconnects. Key
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::669aef23425c170c1d70e87a6a29b74e
https://doi.org/10.1109/imw.2016.7495271
https://doi.org/10.1109/imw.2016.7495271
Autor:
Patrick Khoo, D. X. Wang, Fan Zhang, Juan Boon Tan, Kin Leong Pey, Y. T. Chow, Bo Liu, Danny Pak-Chum Shum, J. Y. Huang, H. Balan, C. Q. Chen, K. Shubhakar, M. Oh, Y. J. Kong, Laiqiang Luo, Y. M. Liu
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Embedded non-volatile memory (NVM) introduces additional thermal processes to a logic process flow and the impact from this extra thermal budget becomes more considerable with continued device scaling. This paper investigates the mechanism of SRAM V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39836f3db4e8ceca699b8004fbb45e3
https://doi.org/10.1109/ipfa.2015.7224346
https://doi.org/10.1109/ipfa.2015.7224346