Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Patrick Haiber"'
Autor:
Botond Sánta, Dániel Molnár, Patrick Haiber, Agnes Gubicza, Edit Szilágyi, Zsolt Zolnai, András Halbritter, Miklós Csontos
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 92-100 (2020)
Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high op
Externí odkaz:
https://doaj.org/article/0c34efc4831b4a308e698a06dc25726a
Publikováno v:
Nano Letters. 20:5773-5778
We study voltage-induced conductance changes of Pb, Au, Al, and Cu atomic contacts. The experiments are performed in vacuum at low temperature using mechanically controllable break junctions. We determine switching histograms, i.e., distribution func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf62f634761380167049a22182d9fb07
https://doi.org/10.1021/acs.nanolett.0c01597
https://doi.org/10.1021/acs.nanolett.0c01597
Autor:
M. Csontos, Dániel Molnár, Botond Sánta, Edit Szilágyi, Zsolt Zolnai, András Halbritter, Agnes Gubicza, Patrick Haiber
Publikováno v:
Beilstein Journal of Nanotechnology, 11
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 92-100 (2020)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 92-100 (2020)
Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c2b6536afa196a32971020c341941b0
https://hdl.handle.net/20.500.11850/581353
https://hdl.handle.net/20.500.11850/581353
