Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Patrick H. Keys"'
Publikováno v:
Journal of Microelectronic Manufacturing, Vol 3, Iss 4 (2020)
During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel. In this paper, we review examples of applications involving a
Externí odkaz:
https://doaj.org/article/e7671b8051ec4a489df837cb5374c8c4
Autor:
M. Stettler, Colin D. Landon, Cory E. Weber, Prabakar Marepalli, Daniel Pantuso, Lei Jiang, Patrick H. Keys, Sayed Hasan, Stephen M. Cea
Publikováno v:
IEEE Transactions on Electron Devices. 68:5350-5357
The objective of this work is to briefly illustrate the breadth of problems industrial technology computer aided design (TCAD) departments are expected to address when supporting modern semiconductor process development, focusing on two important tre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b07a2ae837b68efd47ee8e3129faf75
https://doi.org/10.1109/ted.2021.3076976
https://doi.org/10.1109/ted.2021.3076976
Autor:
Aaron Douglas Lilak, Patrick H. Keys
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bfb1197b90f5d7a5f40b86a26f2944c
https://doi.org/10.1007/978-3-030-79827-7_1
https://doi.org/10.1007/978-3-030-79827-7_1
Publikováno v:
Journal of Microelectronic Manufacturing, Vol 3, Iss 4 (2020)
During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel. In this paper, we review examples of applications involving a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53ab6f26aedd05f06f6153adcf8943ea
https://doi.org/10.33079/jomm.20030406
https://doi.org/10.33079/jomm.20030406
Autor:
K. Ghosh, M. Stettler, V. Tiwari, Mehandru Rishabh, Cory E. Weber, S. Berrada, S. Cea, B. Obradovic, Sayed Hasan, Patrick H. Keys
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Process and device simulation has been invaluable for logic technology development for many technology nodes. The main goal of this work will be to review the broad and diverse simulation hierarchy that is used in industry to understand and optimize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38fd425dce22929b11a8d3f52763ff16
https://doi.org/10.1109/sispad54002.2021.9592551
https://doi.org/10.1109/sispad54002.2021.9592551
Autor:
A. Slepko, Sayed Hasan, V. Tiwari, Justin R. Weber, A. Kaushik, Patrick H. Keys, Daniel Pantuso, Roza Kotlyar, S. Smith, Lei Jiang, S. Cea, Cory E. Weber, M. Stettler, Colin D. Landon
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In the past 25 years, process and device TCAD used in direct support of industrial process development has undergone radical change. In the era of Dennard scaling [1], TCAD efforts in manufacturers such as Intel could arguably be described as advance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0303606a9b437678f2c539b537e9d4b
https://doi.org/10.1109/iedm19573.2019.8993451
https://doi.org/10.1109/iedm19573.2019.8993451
Autor:
A. M. Zwerver, Lester Lampert, Patrick H. Keys, Eric M. Henry, K. Millard, N. Kashani, Payam Amin, Menno Veldhorst, G. Scappucci, Jessica M. Torres, James S. Clarke, R. Pillarisetty, Nicole K. Thomas, Thomas F. Watson, Tobias Krähenmann, Hubert C. George, Bojarski Stephanie A, Otto Zietz, F. Luthi, Roza Kotlyar, Jeanette M. Roberts, David J. Michalak, Lieven M. K. Vandersypen, Roman Caudillo
Publikováno v:
2019 IEEE International Electron Devices Meeting, IEDM 2019, 2019-December
Perhaps the greatest challenge facing quantum computing hardware development is the lack of a high throughput electrical characterization infrastructure at the cryogenic temperatures required for qubit measurements. In this article, we discuss our ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::40cdbfb411a6f23a001f26646bc46ca4
https://doi.org/10.1109/iedm19573.2019.8993587
https://doi.org/10.1109/iedm19573.2019.8993587
Autor:
Sayed Hasan, Lilak Aaron D, Hal Kennel, Cory E. Weber, Stephen M. Cea, Mehandru Rishabh, Patrick H. Keys, M. Stettler, B. Obradovic
Publikováno v:
ECS Meeting Abstracts. :1741-1741
TCAD process and device simulation has been used to understand and optimize advanced logic devices for many technology nodes. Stress engineering and modeling has also been an important part of device analysis for decades, long before it was intention
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3040222969feb52ac9dd83d01fd3cb5
https://doi.org/10.1149/ma2020-02241741mtgabs
https://doi.org/10.1149/ma2020-02241741mtgabs
Autor:
Roza Kotlyar, Payam Amin, Lieven M. K. Vandersypen, Singh Kanwaljit, Jessica M. Torres, G. Droulers, Matthew V. Metz, GertJan Eenink, R. Li, R. Pillarisetty, A. M. J. Zwerver, Thomas F. Watson, Nicole K. Thomas, Juan Pablo Dehollain, Jeanette M. Roberts, L. Massa, Christian Volk, Nodar Samkharadze, Menno Veldhorst, G. Zheng, J.M. Boter, Giordano Scappucci, D. Sabbagh, Lester Lampert, Patrick H. Keys, Brian Paquelet Wuetz, Hubert C. George, James S. Clarke
Publikováno v:
2018 IEEE International Electron Devices Meeting, IEDM 2018, 2018-December
Quantum computing's value proposition of an exponential speedup in computing power for certain applications has propelled a vast array of research across the globe. While several different physical implementations of device level qubits are being inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05a39f20d1c27370acc5d8b8c2367194
https://doi.org/10.1109/iedm.2018.8614624
https://doi.org/10.1109/iedm.2018.8614624
Autor:
P. Fleischmann, Patrick H. Keys, M. Stettler, A. Kaushik, Harold W. Kennel, Cory E. Weber, Martin D. Giles, S. S. Botelho, A. Grigoriev, A. D. Lilak, S. Cea, Anurag Chaudhry, N. Voynich, N. Zhavoronok, B. Voinov, Mehandru Rishabh
Publikováno v:
Journal of Computational Electronics. 13:18-32
Front end process simulation is an invaluable tool in assessing current and future process options. This review describes the application of process simulation in modeling geometry, doping and stress effects in advanced logic processes. Continuum and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8c2d78509aabe22f3cd860f521dd39
https://doi.org/10.1007/s10825-013-0491-6
https://doi.org/10.1007/s10825-013-0491-6