Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Patrick Gas"'
Publikováno v:
Organic Materials, Vol 4, Iss 04, Pp 146-152 (2022)
Abstract Qualitative NMR spectroscopic and quantitative calorimetric binding studies were performed to characterize the interaction of nontoxic mimics of the V-type nerve agent VX (O-ethyl S-[2-(diisopropylamino)ethyl] methylphosphonothioate) and th
Externí odkaz:
https://doaj.org/article/c57b1c4f44644319aa0ffc6f0103135c
Publikováno v:
International Journal of Materials Research. 109:275-275
The rule states that in compounds of the form AmBn, with m/n greater than 2, the atoms of species A should diffuse considerably faster than those of B. The essay is divided into several parts, the first of which considers original expressions of the
Autor:
F. Nemouchi, Dominique Mangelinck, Christian Lavoie, János L. Lábár, C. Bergman, Patrick Gas, C. Perrin
Publikováno v:
Materials Science and Engineering: B. :163-167
Thin film germanide reactions are often declared to be the same as silicides reactions which were far more studied. In this paper, we present a comparative study of the phase formation and kinetics of nickel silicides and nickel germanides by several
Publikováno v:
Defect and Diffusion Forum. 264:163-169
Experiments of niobium diffusion at infinite dilution and Nb reaction-diffusion in pure iron and in ferrites with different amounts of carbon were performed, for comparison, in order to understand the influence of carbon on the diffusion process in t
Autor:
J.S. Christensen, Alain Portavoce, Bengt Gunnar Svensson, Patrick Gas, Isabelle Berbezier, Andrej Yu. Kuznetsov, Antoine Ronda
Publikováno v:
Defect and Diffusion Forum. 249:135-142
We have investigated the lattice diffusion of B and Sb by means of molecular beam epitaxy in Si1−xGex (x < 0.2) layers grown on Si(001) substrate. Using Si1−xGex relaxed buffers we were able to differentiate the chemical effect (change in the Ge
Publikováno v:
Journal of Electroanalytical Chemistry. 584:23-27
In this work, we give three examples of interfacial reactions in Al/transition metal (TM)- or Si/TM systems in which the specificities of the reactive diffusion (selectivity, nucleation threshold) on the nanoscale are emphasized. In particular, this
Publikováno v:
Journal of Electroanalytical Chemistry. 573:71-75
In this work, we give three examples of interfacial reactions in Al/transition metal (TM)- or Si/TM systems in which the specificities of the reactive diffusion (selectivity, nucleation threshold) on the nanoscale are emphasized. In particular, this
Publikováno v:
Journal of Applied Physics. 90:6409-6415
The formation of C54 TiSi2 using Ti-Nb alloys deposited on polycrystalline Si substrates was studied by means of in situ x-ray diffraction and resistance measurements during temperature ramping. Al ...
Publikováno v:
Journal of Applied Physics. 90:3899-3904
Despite their technological importance for nanoscale technologies, the initial stages of reaction at interfaces (and their dependence on experimental conditions) are still poorly understood. In this article we analyze the initial stages of solid stat
Publikováno v:
Defect and Diffusion Forum. :807-814