Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Patrick Folkes"'
Autor:
Patrick J. Taylor, Sean D. Harrington, Owen Vail, Barbara Nichols, George de Coster, Alex Chang, Patrick Folkes, Chris Palmstrom
Publikováno v:
Journal of Electronic Materials. 50:6329-6336
α-Sn has been hailed as a single-element topological material with great promise for spintronic applications due to its strong spin–orbit coupling. Epitaxial growth on CdTe is identified as a method to isolate the novel electronic properties of th
Publikováno v:
Physical Review Letters. 122
Pb_{1-x}Sn_{x}Te has been shown to be an interesting tunable topological crystalline insulator system. We present a magnetoterahertz spectroscopic study of thin films of Pb_{0.5}Sn_{0.5}Te. The complex Faraday rotation angle and optical conductivity
Publikováno v:
Physical Review B. 98
It is known that compressive or tensile planar strain determines the band structure topology of the diamond cubic allotrope of tin ($\ensuremath{\alpha}$-Sn) to be either a Dirac semimetal (DSM) or topological insulator (TI), respectively. Using anal
Autor:
James R. Williams, Patrick J. Taylor, Patrick Folkes, R. A. Snyder, Charles Rong, Christie J. Trimble
Publikováno v:
Physical review letters. 121(9)
We report on the fabrication of Josephson junctions using the topological crystalline insulator ${\mathrm{Pb}}_{0.5}{\mathrm{Sn}}_{0.5}\mathrm{Te}$ as the weak link. The properties of these junctions are characterized and compared to those fabricated
Autor:
Patrick J. Taylor, George de Coster, Brian B. Haidet, Barbara Nichols, Owen Vail, Kunal Mukherjee, Patrick Folkes
Publikováno v:
physica status solidi (b). 257:1800513
Autor:
Brenda L. VanMil, B. C. Connelly, Yuhang Ren, W. A. Beck, Zehra Cevher, H. S. Hier, Patrick Folkes
Publikováno v:
Journal of Applied Physics. 123:161512
We used Raman scattering and time-resolved photoluminescence spectroscopy to investigate the molecular-beam-epitaxy (MBE) growth parameters that optimize the structural defects and therefore the internal radiative quantum efficiency of MBE-grown GaAs
Publikováno v:
Solid State Communications. 150:832-835
We have studied the collective properties of two-dimensional (2D) excitons immersed within a quantum well which contains 2D excitons and a two-dimensional electron gas (2DEG). We have also analyzed the excitations for a system of 2D dipole excitons w
Autor:
Patrick Folkes
Publikováno v:
Journal of Luminescence. 115:104-108
Excitons which coexist with a degenerate two-dimensional electron gas (2DEG) in the same quantum well subband have been observed in the photoluminescence (PL) from the recombination of electrons with localized photoexcited holes. We observe a strong
Publikováno v:
Journal of Electronic Materials. 28:L38-L41
Low temperature photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors with a low-temperature (LT) GaAs layer in the GaAs buffer layer clearly show a decrease in the quantum well PL transition energies compared to a structu
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:1536-1538
We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gap quantum well systems. The theoretical model is developed through solving self-consistently the Schrodinger equation for the e