Výsledky vyhledávání - "Patrick Demars"

Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

Autor: Marianne Consonni, Michele D'Amico, Patrick Demars, Myriam Tournaire, Jean-Christophe Pillet, Jean Michel Lamy, Alexandre Lagrange, Margaux Vigier, Cao Edgar, Aurélien Suhm, Eric Feltin, Laurent Charrier, Badhise Ben Bakir, Philippe Coni, Valentin Le Marchand, Gunther Haas, Etienne Quesnel, Nicolas Olivier

Publikováno v: Journal of the Society for Information Display
Journal of the Society for Information Display, Society for Information Display(AIP), 2020, ⟨10.1002/jsid.884⟩
Journal of the Society for Information Display, 2020, ⟨10.1002/jsid.884⟩

International audience; This paper focuses on the dimensioning of a very bright full color 10 μm-pitch light-emitting device (LED) microdisplay for avionics application. Starting from the specifications of head-mounted display to be used in an augme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8270d5bccd8b6296be7ad6198820d2e6
https://doi.org/10.1002/jsid.884

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Fabrication of high performance low temperature poly-silicon backplanes on metal foil for flexible active-matrix organic light emission diode displays

Autor: Patrick Martin, Jean-Louis Botrel, Bernard Aventurier, Patrick Demars, François Templier

Publikováno v: Thin Solid Films. 515:7428-7432

We have developed Low Temperature Poly-Silicon (LTPS) backplanes on metal for flexible 2.8-in. Active-Matrix Organic Light Emission Diode (AM-OLED) displays. The PMOS devices exhibit interesting characteristics such as field-effect mobility of 83 cm2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f0a76647d8d63872a5aee5b471b10443
https://doi.org/10.1016/j.tsf.2006.11.197

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P-4: Mechanisms of Threshold Voltage Drift in Nanocrystalline Thin-Film Transistors for Active-Matrix Displays

Autor: François Templier, Patrick Demars, Frederic Sermet, M. Oudwan

Publikováno v: SID Symposium Digest of Technical Papers. 39:1181

The mechanisms of threshold voltage (Vth) drift in nanocrystalline silicon (nc-Si:H) TFTs have been investigated. Using bias-temperature stress measurements, it is found that the dominant mechanism of Vth drift is charge trapping in the SiNx gate ins

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c5b5e87974745f36277927e41e5e2ca2
https://doi.org/10.1889/1.3069345

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