Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Patrick C. Mende"'
Autor:
Chiashain Chuang, Guangjun Cheng, George R. Jones, Chieh-I Liu, Chieh-Wen Liu, Randolph E. Elmquist, Patrick C. Mende, Randall M. Feenstra, Irene Calizo, Angela R. Hight Walker, Yanfei Yang
Publikováno v:
Carbon. 115:229-236
Quantized magnetotransport is observed in 5.6 × 5.6 mm2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of R x y = h 2 e 2 is ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c581a743628b4ca5e398f0e6abd7c5b4
https://doi.org/10.1016/j.carbon.2016.12.087
https://doi.org/10.1016/j.carbon.2016.12.087
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da8f0c0406b28fce14e389541244bf5c
http://arxiv.org/abs/1807.02539
http://arxiv.org/abs/1807.02539
Autor:
Robert M. Wallace, Patrick C. Mende, Kyeongjae Cho, Sergio C. de la Barrera, Joshua A. Robinson, Yu-Chuan Lin, Yifan Nie, Jun Li, Randall M. Feenstra, Rafik Addou, Sarah M. Eichfeld
Publikováno v:
Nanoscale. 8:8947-8954
Two-dimensional tungsten diselenide (WSe2) has been used as a component in atomically thin photovoltaic devices, field effect transistors, and tunneling diodes in tandem with graphene. In some applications it is necessary to achieve efficient charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d7f508bedef3e4fb6824d28208d8a93
https://doi.org/10.1039/c6nr01902a
https://doi.org/10.1039/c6nr01902a
Autor:
Chih Yuan S. Chang, Tak-Pong Woo, Patrick C. Mende, Chieh-Wen Liu, Chi-Te Liang, Randolph E. Elmquist, Lung I. Huang, Lain-Jong Li, Cheng-Hua Liu, Shun-Tsung Lo, Fan Hung Liu, Chiashain Chuang, Hsin Yen Lee, Chieh I. Liu, Randall M. Feenstra, Yanfei Yang
Publikováno v:
Nanoscale. 6:10562-10568
The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2315a9490a411b15faa6425500c34380
https://doi.org/10.1039/c4nr02980a
https://doi.org/10.1039/c4nr02980a
Autor:
Harry Chou, Randall M. Feenstra, Patrick C. Mende, Qin Gao, Michael Widom, Luigi Colombo, Ariel Ismach, Rodney S. Ruoff
The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electron microscopy (LEEM). The reflectivity of the electrons, measured over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::651715c1bd94d86f5de09909a81578b7
Autor:
Devashish P. Gopalan, Patrick C. Mende, Brian D'Urso, Kehao Zhang, Qingxiao Wang, Moon J. Kim, Randall M. Feenstra, Shonali Dhingra, Ning Lu, Nicholas A. Simonson, Joshua A. Robinson, Jun Li, Sergio C. de la Barrera
Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::760f4a8a5c608c3253e24f5ab98c18d9
http://arxiv.org/abs/1509.04531
http://arxiv.org/abs/1509.04531
Autor:
Andrei Dolocan, Luigi Colombo, Rodney S. Ruoff, Harry Chou, Robert M. Wallace, Patrick C. Mende, Shaul Aloni, Rafik Addou, Ariel Ismach, Randall M. Feenstra
Publikováno v:
2D Materials. 4:025117
We show that in a low-pressure chemical vapor deposition (CVD) system, the residual oxygen and/or air play a crucial role in the mechanism of the growth of hexagonal boron nitride (h-BN) films on Ni foil 'enclosures'. Hexagonal-BN films grow on the N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d588977c8c642754b8a3369ebe5e5ad6
https://doi.org/10.1088/2053-1583/aa74a5
https://doi.org/10.1088/2053-1583/aa74a5
Autor:
Chendong Zhang, Lain-Jong Li, Ming-Yang Li, Randall M. Feenstra, Yuxuan Chen, Patrick C. Mende, Chih-Kang Shih, Amber Johnson
Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and photonics. Although theoretical calculations to date have shown qualitat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bf9e0405fdfac2bc8938b14bb65b660
http://arxiv.org/abs/1412.8487
http://arxiv.org/abs/1412.8487
A simple method is proposed for inclusion of inelastic effects (electron absorption) in computations of low-energy electron reflectivity (LEER) spectra. The theoretical spectra are formulated by matching of electron wavefunctions obtained from first-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbc8a7a406d96809b548f58520b70440
http://arxiv.org/abs/1411.6486
http://arxiv.org/abs/1411.6486
Autor:
Jacek K. Furdyna, Xinyu Liu, Angelica Azcatl, Suresh Vishwanath, Sergei Rouvimov, Stephen McDonnell, Robert M. Wallace, Patrick C. Mende, Huili Grace Xing, Debdeep Jena, Randall M. Feenstra
Publikováno v:
2D Materials. 2:024007
We report the structural and optical properties of a molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H–MoSe2 grows by va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de685f6b8aa428d713204e09c6558d4b
https://doi.org/10.1088/2053-1583/2/2/024007
https://doi.org/10.1088/2053-1583/2/2/024007