Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Patricia Krenckel"'
Autor:
Patricia Krenckel, Yusuke Hayama, Florian Schindler, Theresa Trötschler, Stephan Riepe, Noritaka Usami
Publikováno v:
Crystals, Vol 11, Iss 2, p 90 (2021)
The introduction of directional solidified cast mono silicon promised a combination of the cheaper production via a casting process with monocrystalline material quality, but has been struggling with high concentration of structural defects. The SMAR
Externí odkaz:
https://doaj.org/article/6522eb8d13c84f809adc117a90a050b5
Autor:
Florian Schindler, Ralph Müller, Armin Richter, Martin C. Schubert, Jan Benick, Benjamin Hammann, Patricia Krenckel, Stephan Riepe, S. Nold
The interest in cast mono silicon is increasing due to its lower energy consumption and resulting smaller carbon footprint, lower oxygen content and resulting less oxygen-related defects as well as easy scalability to large wafer formats like 210 ×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8575ca5aaa7578bd951acf84d27877ed
https://publica.fraunhofer.de/handle/publica/264869
https://publica.fraunhofer.de/handle/publica/264869
Autor:
Patricia Krenckel, Theresa Trötschler, Adam Hess, Noritaka Usami, Stephan Riepe, Soichiro Kamibeppu
We propose a method of three-dimensional (3D) visualization of growth interfaces in crystalline ingots prepared by directional solidification and apply the method to cast silicon ingot for solar cells. The method consists of dispersing inclusions alo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ef119006b5d919848e04b24027ba6ef
https://publica.fraunhofer.de/handle/publica/261811
https://publica.fraunhofer.de/handle/publica/261811
Autor:
Stephen Riepe, Zhao Shen, David Tweddle, Friedemann D. Heinz, Peter R. Wilshaw, Phillip Hamer, Michael P. Moody, Patricia Krenckel, Florian Schindler
During the production of high-performance multicrystalline silicon (HPMC-Si) solar cells, gettering occurs inherently during the formation of an emitter. The material benefits with an increase in minority carrier lifetime from the external gettering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::facf1fcb950354262ca3af2f79816bd2
https://publica.fraunhofer.de/handle/publica/261386
https://publica.fraunhofer.de/handle/publica/261386
Autor:
Martin C. Schubert, Andreas Fell, Armin Richter, Stefan W. Glunz, Stephan Riepe, Patricia Krenckel, Ralph Müller, Frank Feldmann, Florian Schindler, Jan Benick
Publikováno v:
Solar Energy Materials and Solar Cells. 185:198-204
In this contribution, we present our recent results for high efficiency multicrystalline silicon solar cells. Based on n-type high-performance multicrystalline silicon substrates in combination with the TOPCon solar cell concept featuring a full area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcd78ca3189bc6ce355abcd3387ab1db
https://doi.org/10.1016/j.solmat.2018.05.006
https://doi.org/10.1016/j.solmat.2018.05.006
Autor:
Katharina Welter, C. Plonka, Stephan Riepe, Christian Stieghorst, Barbara Karches, Patricia Krenckel, P. Kudějová, G. Hampel, Zsolt Révay, Norbert Wiehl
Publikováno v:
Journal of Radioanalytical and Nuclear Chemistry. 317:307-313
For the optimization of the manufacturing process of multicrystalline silicon (mc-Si) for solar cells in order to reduce energy consumption and costs, it is important to know the distribution of the impurities. In our project, we analyzed the raw mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b1ba1eeda739e57031ea767225d1e0
https://doi.org/10.1007/s10967-018-5880-7
https://doi.org/10.1007/s10967-018-5880-7
Autor:
Martin C. Schubert, Stefan W. Glunz, Patricia Krenckel, Ralph Müller, Bernhard Michl, Jan Benick, Florian Schindler, Armin Richter, Stephan Riepe
Publikováno v:
Solar Energy Materials and Solar Cells. 171:180-186
Multicrystalline (mc) n-type silicon has proven to be a suitable substrate for the fabrication of highly efficient mc-Si solar cells. In this paper, we elaborate the impact of base material parameters on the efficiency potential of n-type mc-Si solar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e79ae50db911e1a12ee6ef6b13ff6dbe
https://doi.org/10.1016/j.solmat.2017.06.005
https://doi.org/10.1016/j.solmat.2017.06.005
Autor:
Armin Richter, Stefan W. Glunz, Patricia Krenckel, Florian Schindler, Ralph Müller, Jan Benick, Martin C. Schubert, Stephan Riepe, Bernhard Michl
Publikováno v:
Energy Procedia. 124:777-780
In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7f172c161a3b4f1f2005248401d1239
https://doi.org/10.1016/j.egypro.2017.09.086
https://doi.org/10.1016/j.egypro.2017.09.086
Autor:
Jan Benick, Patricia Krenckel, Hubert Hauser, Stephan Riepe, Florian Schindler, Ralph Müller, Stefan W. Glunz, Frank Feldmann, Andreas W. Bett, Martin Hermle, Armin Richter, Martin C. Schubert
Publikováno v:
IEEE Journal of Photovoltaics. 7:1171-1175
Silicon solar cells featuring the highest conversion efficiencies are made from monocrystalline n-type silicon. The superior crystal quality of high-performance multicrystalline silicon (HP mc) in combination with the inherent benefits of n-type dopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08d8e220be4b91d5b53c0e8ea7d1bc90
https://doi.org/10.1109/jphotov.2017.2714139
https://doi.org/10.1109/jphotov.2017.2714139
Publikováno v:
Energy Procedia. 124:806-813
In High-Performance mc-Si [1] random grain boundaries, although being recombination active, often enhance material quality by reducing dislocations. With this work, we take a step towards statistical large-scale investigations of crystal defects via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a43b4392a465c9fc7e6a60df6e88806
https://doi.org/10.1016/j.egypro.2017.09.351
https://doi.org/10.1016/j.egypro.2017.09.351