Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Patricia G. Blauner"'
Autor:
A. Bright, David E. Seeger, D. Patel, Karen Petrillo, T.J. Bucelot, P. Agnello, John Michael Warlaumont, Andrew Pomerene, R. Viswanathan, J. Conway, Patricia G. Blauner
Publikováno v:
Microelectronic Engineering. 23:247-252
Fully functional 512Kb static-random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal oxide semiconductor (CMOS) technology using compact storage ring X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::805341edbf7bb31a1351258f76c787e3
https://doi.org/10.1016/0167-9317(94)90148-1
https://doi.org/10.1016/0167-9317(94)90148-1
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
Process latitude study of focused ion beam deposited gold for clear x-ray mask repairP.G. Blauner, A.D. Dubn&), and A. WagnerIBM Semiconductor Research and Development Center, TJ. Watson Research Center,Yorktown Heights, NY 10598a) Now at 3-M Optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5af2f03fd62169132c82ee48812b88a
https://doi.org/10.1117/12.146496
https://doi.org/10.1117/12.146496
Publikováno v:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III.
Acid catalyzed positive tone APEX photoresist has been examined for exposure using the Helios compact synchrotron x-ray source at the IBM Advanced Lithography Facility (ALF) in East Fishkill, New York. A four factor Taguchi optimization was implement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d67d4134a47ea38e195da5f7610bc2
https://doi.org/10.1117/12.146495
https://doi.org/10.1117/12.146495
Publikováno v:
SPIE Proceedings.
A model of focused ion beam deposition of materials is described. Decomposition of organometallic molecules by ion beams 50-300 nm in diameter allow localized deposition of a variety of metals. The large current density (approximately I A/cm2) and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8a7ddd0ff30acbc587e96881759a41
https://doi.org/10.1117/12.20140
https://doi.org/10.1117/12.20140
Autor:
Patricia G. Blauner
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:3070
Repair of gold absorber x‐ray masks with ground rules down to 250 nm is now accomplished using commercially available focused ion beam (FIB) tooling. Chief among the challenges in extending this technology to below 250 nm is that presented by the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa3154684699ffbb67c4bb8801c75ba9
https://doi.org/10.1116/1.588324
https://doi.org/10.1116/1.588324
Autor:
A. Bright, Andrew Pomerene, J. Conway, R. Viswanathan, T.J. Bucelot, David E. Seeger, D. Patel, Patricia G. Blauner, P.D. Agnello, Karen Petrillo, John Michael Warlaumont
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2910
Functional 512K static random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal–oxide semiconductor technology using compact storage ring x‐ray lithograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea7cebc7f917e8902d050df1790d1b7
https://doi.org/10.1116/1.586560
https://doi.org/10.1116/1.586560
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1557
The application of focused ion beams to the repair of defects in x‐ray masks is described. An image of the defective region on the mask is obtained using the ion beam in a manner analogous to a scanning electron microscope. Opaque defects are remov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c21e492b250ead85275ae0b2a5494798
https://doi.org/10.1116/1.585115
https://doi.org/10.1116/1.585115
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 13:338-342
The intensity of secondary ion emission from oxidized V bombarded by 10–90 MeV 79 Br projectiles has been measured. The intensity of V + ion emission was proportional to the nuclear stopping cross section for Br in V indicating that these ions were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54f05d85bafcec5bbe7bf1d3dd3e8e44
https://doi.org/10.1016/0168-583x(86)90523-9
https://doi.org/10.1016/0168-583x(86)90523-9
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 13:369-373
Positive secondary ion mass spectra have been measured for oxidized polycrystalline V and Al targets bombarded by H+, H2+, He+ and Ar+ ions with beam energies ranging from 25 keV to 275 keV. An enhancement in the relative yield of positive ions of el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::932822900509045d3391ab43b6cf19a8
https://doi.org/10.1016/0168-583x(86)90530-6
https://doi.org/10.1016/0168-583x(86)90530-6
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 12:343-351
Positive secondary ion mass spectra have been measured from stainless steel, copper, niobium, and vanadium targets bombarded by 70 MeV 79 Br 7+ and 100 keV 40 Ar + ions using a modified quadrupole residual gas analyzer. Additional spectra have also b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94f86062910721ed1710a3f7554af516
https://doi.org/10.1016/0168-583x(85)90032-1
https://doi.org/10.1016/0168-583x(85)90032-1