Výsledky vyhledávání - "Patrice Gonon"

AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material

Autor: Patrice Gonon, O. Khaldi, Fathi Jomni, Christophe Vallée

Publikováno v: Journal of Materials Science: Materials in Electronics. 31:19036-19043

Metal–Insulator–Metal (MIM) capacitors based on high-k oxides require stability with the applied electric field. However, experiment reveals a nonlinear behavior of capacitance with ac or dc bias. In this work, we measure capacitance–voltage no

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d7fffe9aba56492275ef1873f1eea1e1
https://doi.org/10.1007/s10854-020-04440-1

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Correlations between first-principles calculations and electric properties of HfO 2 :Al 2 O 3 alloys for metal–insulator–metal (MIM) capacitor applications

Autor: O. Khaldi, Patrice Gonon, Fathi Jomni

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2020, 128 (13), pp.134101. ⟨10.1063/5.0025130⟩

The electronic structure and optical properties of monoclinic HfO2 (m-HfO2) and HfO2:Al2O3 alloys, from the density functional theory (DFT), are investigated. The calculated lattice parameters and optical properties of m-HfO2 are consistent with the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::506127343383f431f6f765a780af83f8
https://hal.univ-grenoble-alpes.fr/hal-03867656

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Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

Autor: Christophe Vallée, Patrice Gonon, M. Saadi, Ahmad Bsiesy, Fathi Jomni, E. Jalaguier

Publikováno v: Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2020, 31 (16), pp.13487-13495. ⟨10.1007/s10854-020-03903-9⟩
Journal of Materials Science: Materials in Electronics, 2020, 31 (16), pp.13487-13495. ⟨10.1007/s10854-020-03903-9⟩

Resistance switching is studied in conductive bridge memory structures made from atomic layer deposited HfO2 and Ag active electrode. Inert electrode is varied by using different substrates (TiN, W, Pt). HfO2 crystallinity is modified by varying the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa1f13a4389edf4a9d2e9b247f8b2062
https://hal.univ-grenoble-alpes.fr/hal-02916808

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Electrical and optical localisation of leakage current and breakdown point in SiOC:H low-k dielectrics

Autor: Philippe Lentrein, Matthias Vidal-Dho, Q. Hubert, Pascal Fornara, Jean-Michel Moragues, Patrice Ray, Bernard Pelissier, Patrice Gonon

Publikováno v: 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107909⟩

This paper presents a novel methodology to observe the leakage current origin in SiOC:H low-$\kappa$ intermetallic dielectric as well as a method to localise electrically the breakdown point in usual comb/serpentine/comb structures. Our results indic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb1d8bff7790288ec93dd1af810fd697
https://hal.univ-grenoble-alpes.fr/hal-02916807

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Moisture Influence on Reliability and Electrical Characteristics of SiOC:H Low-k Dielectric Material

Autor: Jean-Luc Ogier, Pascale Potard, Matthias Vidal-Dho, Bernard Pelissier, Q. Hubert, Jean-Philippe Escales, Pascal Fornara, Patrice Gonon, Jean-Michel Moragues

Publikováno v: 2019 IEEE International Integrated Reliability Workshop (IIRW).

This paper presents an in depth study of the moisture influence on reliability and electrical characteristics of SiOC:H low-κ dielectric material. Firstly, TDDB models have been evaluated on material without moisture and Impact Damage model is found

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25a6374356b7082ed0b5596d9d5601a7
https://doi.org/10.1109/iirw47491.2019.8989905

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Controlling the Current Conduction Asymmetry of HfO 2 Metal–Insulator–Metal Diodes by Interposing Al 2 O 3 Layer

Autor: Patrice Gonon, Woojin Jeon, Ahmad Chaker, Olivier Salicio, Christophe Vallée

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (1), pp.402-406. ⟨10.1109/TED.2018.2881220⟩
IEEE Transactions on Electron Devices, 2019, 66 (1), pp.402-406. ⟨10.1109/TED.2018.2881220⟩

Metal–insulator–metal (MIM) diodes with bulk-limited current conduction asymmetry employing interposed Al2O3 layer in 6-nm-thick HfO2 film have been investigated. The current density is decreased as the Al2O3 layer is located far from the electro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74ca06da97b9d432ee1bdc87f6f5bc10
https://hal.univ-grenoble-alpes.fr/hal-02325464

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Probing impact on pad moisture tightness: A challenge for pad size reduction

Autor: Patrice Gonon, Pascale Potard, Jean-Michel Mirabel, Jonathan Jacquot, Delphine Maury, Jean-Philippe Escales, Maxime Marchetti, Q. Hubert, Pascal Fornara, Olivier Pizzuto, Matthias Vidal-Dho, Philippe Delorme, Pascal Sallagoity, Jean-Michel Moragues, Ludovic Beauvisage

Publikováno v: Conf. on Microelectronic Test Structures (ICMTS)
Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp.176-179
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS)
IEEE Int. Conf. on Microelectronic Test Structures (ICMTS), 2019, Kita-Kyushu, Japan. pp 176-179

This paper underlines the damages induced by probing on narrow pads reliability of specifically designed test structures placed on dicing streets and indicates that probing during electrical test steps provokes detrimental cracks diving from the pass

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a3ee63e3a5c25ae9fef6997ba49f793
https://hal.univ-grenoble-alpes.fr/hal-02362746

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Effect of Thermal Annealing on Low-K Dielectrics for iBEOL in View of 3D Sequential Integration

Autor: D. Nouguier, Ahmad Bsiesy, Claire Fenouillet-Beranger, N. Rambal, Xavier Federspiel, Christophe Licitra, Patrice Gonon, C. Guerin, S. Beaurepair, P-L. Charvet, Névine Rochat, Marc Veillerot, D. Ney, Vincent Jousseaume

Publikováno v: IEEE Int. Interconnect Technology Conference (IITC)
IEEE Int. Interconnect Technology Conference (IITC), 2018, Santa Clara, United States. pp 61-63

This work presents an in-depth study of the thermal stability of low-k material in view of intermediate Back-End-Of-Line (iBEOL) for 3D sequential Integration. SiOCH ULK were analyzed after thermal annealing up to 600°C. Moreover, the stability and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44ed5abbfb3f02f569e74ad568ea315a
https://hal.univ-grenoble-alpes.fr/hal-01942970

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(Invited) Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

Autor: Ahmad Bsiesy, Christophe Vallée, C. Mannequin, John Pointet, Patrice Gonon

Publikováno v: ECS Transactions. 67:99-110

This paper presents an overview of our work on metal-insulator-metal (MIM) structures used for resistive non-volatile resistive (RRAM) or dynamic (DRAM) random access memories. Atomic layer deposition technique is used to grow the insulator layer. AL

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::07fa17160694f7e073da3456970ec417
https://doi.org/10.1149/06701.0099ecst

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