Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Patrice Balamou"'
Autor:
Daniel Vossing, Karim M. Gad, Patrice Balamou, Daniel Sixtensson, Martin Kasemann, Bert Stegemann, Heike Angermann
Publikováno v:
Applied Surface Science. 395:78-85
Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO 2 /Si interface properties were determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dd5711e72fe67eb84899f736589c210
https://doi.org/10.1016/j.apsusc.2016.06.090
https://doi.org/10.1016/j.apsusc.2016.06.090
Publikováno v:
Solid State Phenomena. 255:331-337
Surface sensitive methods, UV-VIS spectral ellipsometry (SE), surface photovoltage (SPV) measurements, and X-ray photoelectron spectroscopy (XPS) measurements were combined to investigate in detail the Si substrate oxidation and resulting interface e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786e2342d8a5bb4d0701b525adcc7662
https://doi.org/10.4028/www.scientific.net/ssp.255.331
https://doi.org/10.4028/www.scientific.net/ssp.255.331
Autor:
Daniel Vossing, Karim M. Gad, Martin Kasemann, Patrice Balamou, Bert Stegemann, Thomas Lussky, Heike Angermann
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Ultrathin oxide layers on crystalline silicon (c-Si) were prepared by different wet-chemical, plasma- and thermal oxidation techniques. The resulting electronic and chemical SiO 2 /Si interface properties were analyzed, compared and evaluated by comb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e40159c4ad59726ea5e3bb73a9ce7019
https://doi.org/10.1109/pvsc.2018.8548154
https://doi.org/10.1109/pvsc.2018.8548154
Autor:
Daniel Vossing, Daniel Hiller, Heike Angermann, Patrice Balamou, Bert Stegemann, Martin Kasemann, Karim M. Gad
Publikováno v:
Applied Surface Science. 353:1269-1276
We analyze the influence of different oxidation methods on the chemical passivation quality of silicon oxide-nanolayers on crystalline silicon wafers with surface photo voltage and quasi-steady-state photo conductance measurements. We present a simpl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a461d8bf586e3fceef40fa6b55b2bcd
https://doi.org/10.1016/j.apsusc.2015.07.060
https://doi.org/10.1016/j.apsusc.2015.07.060
Autor:
Martin Kasemann, Bert Stegemann, Daniel Vossing, Karim M. Gad, Heike Angermann, Daniel Hiller, Patrice Balamou
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
We analyze the chemical passivation quality of silicon oxide-nanolayers on crystalline silicon wafers prepared by different oxidation methods with surface photo voltage and quasi-steady-state photo conductance measurements. It is shown that for wet c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d486310386cf3a240507eb43b4ccfddb
https://doi.org/10.1109/pvsc.2015.7355750
https://doi.org/10.1109/pvsc.2015.7355750