Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Patiri, V."'
Publikováno v:
Corso, V. ; Bastida, E.M. ; Finardi, C.A. ; Fischer, R.A. ; Patiri, V. (1997) 3.5 GHz bandwidth low-cost GaAs IC receiver for 2.5 to 5 Gbit/s optical links. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
This paper describes the main issues of a work which permitted development, optimization and fabrication of wideband packaged optical receivers for 2.5 to 5 Gbit/s optical links, having extremely low costs. A description of the manufacturing technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4eef36c5e2fa232f4b9a730b340f68f
Publikováno v:
Schrappe, B. J. ; Patiri, V. ; Biazotto, A. ; Finardi, C. A. (1992) Self-consistent simulation and manufacturing of spice-doped GaAs field effect transistors. In: Gallium Arsenide Applications Symposium. GAAS 1992, 27-29 April 1992, Noordwijk, The Netherlands.
The concept of a linear transistor, called d-FET, was developed. The device conduction path is formed by a two-dimensional electron gas, and has a simpler construction in comparison to heterostructure devices, such as the High Electron Mobility Trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c68c6173fe196d1303ac5342a9a6727
Publikováno v:
IEEE Microwave & Guided Wave Letters; 1997, Vol. 7 Issue 10, p317-319, 3p
Publikováno v:
Electronics Letters (Institution of Engineering & Technology); 03/13/1997, Vol. 33 Issue 6, p513-515, 3p
Publikováno v:
1999 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference; 1999, Issue 1, p261-261, 1p
Publikováno v:
1997 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference 'Linking to the Next Century' Proceedings; 1997, Issue 1, p328-328, 1p
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