Zobrazeno 1 - 10
of 136
pro vyhledávání: '"Pate, Bradford"'
Autor:
Aller, Henry T., Pfeifer, Thomas W., Mamun, Abdullah, Huynh, Kenny, Tadjer, Marko, Feygelson, Tatyana, Hobart, Karl, Anderson, Travis, Pate, Bradford, Jacobs, Alan, Lundh, James Spencer, Goorsky, Mark, Khan, Asif, Hopkins, Patrick, Graham, Samuel
This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered i
Externí odkaz:
http://arxiv.org/abs/2408.08076
Autor:
Biswas, Abhijit, Alvarez, Gustavo A., Li, Tao, Christiansen-Salameh, Joyce, Jeong, Eugene, Puthirath, Anand B., Iyengar, Sathvik Ajay, Li, Chenxi, Gray, Tia, Zhang, Xiang, Pieshkov, Tymofii S., Kannan, Harikishan, Elkins, Jacob, Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Pate, Bradford B., Ivanov, Tony G., Zhao, Yuji, Tian, Zhiting, Ajayan, Pulickel M.
Publikováno v:
Phys. Rev. Materials 7, 094602 (2023)
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremel
Externí odkaz:
http://arxiv.org/abs/2305.13306
Autor:
Biswas, Abhijit, Xu, Rui, Alvarez, Gustavo A., Zhang, Jin, Christiansen-Salameh, Joyce, Puthirath, Anand B., Burns, Kory, Hachtel, Jordan A., Li, Tao, Iyengar, Sathvik Ajay, Gray, Tia, Li, Chenxi, Zhang, Xiang, Kannan, Harikishan, Elkins, Jacob, Pieshkov, Tymofii S., Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Garratt, Elias J., Ivanov, Tony, Pate, Bradford B., Zhao, Yuji, Zhu, Hanyu, Tian, Zhiting, Rubio, Angel, Ajayan, Pulickel M.
Publikováno v:
Adv. Mater. 2023, 2304624
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers
Externí odkaz:
http://arxiv.org/abs/2304.12312
Autor:
Biswas, Abhijit, Xu, Rui, Christiansen-Salameh, Joyce, Jeong, Eugene, Alvarez, Gustavo A., Li, Chenxi, Puthirath, Anand B., Gao, Bin, Garg, Arushi, Gray, Tia, Kannan, Harikishan, Zhang, Xiang, Elkins, Jacob, Pieshkov, Tymofii S., Vajtai, Robert, Birdwell, A. Glen, Neupane, Mahesh R., Pate, Bradford B., Ivanov, Tony, Garratt, Elias J., Dai, Pengcheng, Zhu, Hanyu, Tian, Zhiting, Ajayan, Pulickel M.
Publikováno v:
Nano Lett. 2023, 23, 15, 6927
Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate a
Externí odkaz:
http://arxiv.org/abs/2304.08474
Autor:
Gray, Tia, Zhang, Xiang, Biswas, Abhijit, Terlier, Tanguy, Oliveira, Eliezer F., Puthirath, Anand B., Li, Chenxi, Pieshkov, Tymofii S., Garratt, Elias J., Neupane, Mahesh R., Pate, Bradford B., Birdwell, A. Glen, Ivanov, Tony G., Vajtai, Robert, Ajayan, Pulickel M.
Publikováno v:
In Carbon September 2024 228
Autor:
Yates, Luke, Cheng, Zhe, Bai, Tingyu, Hobart, Karl, Tadjer, Marko, Feygelson, Tatyana I., Pate, Bradford B., Goorsky, Mark, Graham, Samuel
As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as
Externí odkaz:
http://arxiv.org/abs/2006.12464
Autor:
Maza, William A., Breslin, Vanessa M., Feygelson, Tatyana I., DeSario, Paul A., Pate, Bradford B., Owrutsky, Jeffrey C., Epshteyn, Albert
Publikováno v:
In Applied Catalysis B: Environment and Energy 15 May 2023 325
Autor:
Cheng, Zhe, Bai, Tingyu, Shi, Jingjing, Feng, Tianli, Wang, Yekan, Mecklenburg, Matthew, Li, Chao, Hobart, Karl D., Feygelson, Tatyana I., Tadjer, Marko J., Pate, Bradford B., Foley, Brian M., Yates, Luke, Pantelides, Sokrates T., Cola, Baratunde A., Goorsky, Mark, Graham, Samuel
The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly
Externí odkaz:
http://arxiv.org/abs/1807.11400
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Akademický článek
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