Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Patchareewan Prongjit"'
Autor:
Chiraporn Tongyam, Patchareewan Prongjit, Piyasan Prasertthdam, Somchai Ratanathammaphan, Somsak Panyakeow, Samatcha Vorathamrong
Publikováno v:
Advanced Materials Research. 1131:16-19
The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f0c056ce953df0e19417f092d82d6bb
https://doi.org/10.4028/www.scientific.net/amr.1131.16
https://doi.org/10.4028/www.scientific.net/amr.1131.16
Autor:
Somchai Ratanathammaphan, Supachok Thainoi, Patchareewan Prongjit, Maetee Kunrugsa, Suwit Kiravittaya, Somsak Panyakeow, Kamonchanok Khoklang
Publikováno v:
Journal of Crystal Growth. 425:291-294
We report on the molecular beam epitaxial growth of self-assembled GaSb quantum dots (QDs) on (0 0 1) GaAs substrates with an insertion layer. The insertion layer, which is a 4-monolayers (MLs) InxGa1−xAs (x=0.00, 0.07, 0.15, 0.20 and 0.25), is gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43a0abe075f74566f6e76f18825d0625
https://doi.org/10.1016/j.jcrysgro.2015.02.044
https://doi.org/10.1016/j.jcrysgro.2015.02.044
Autor:
Somchai Ratanathammaphan, Supachok Thainoi, N. Pankaow, Patchareewan Prongjit, Somsak Panyakeow
Publikováno v:
Microelectronic Engineering. 110:298-301
Post-growth annealing in UHV can lead to the deformation of crystallized nanostructures. Annealing effects on structural and optical properties of InGaAs quantum rings (QRs) grown by droplet epitaxy was examined. The InGaAs QRs were fabricated by dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26aea364727b38c059747dae489427a3
https://doi.org/10.1016/j.mee.2013.02.029
https://doi.org/10.1016/j.mee.2013.02.029
Publikováno v:
2015 12th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON).
We have demonstrated the fabrication of lateral InAs quantum dot molecules (QDMs) on InGaAs square-like nanohole templates by 2-step growth technique using solid-source molecular beam epitaxy (MBE). In this work, the first step of fabrication process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de06359f4308768ed076947bd65d51e
https://doi.org/10.1109/ecticon.2015.7206948
https://doi.org/10.1109/ecticon.2015.7206948
Autor:
Somsak Panyakeow, Patchareewan Prongjit, Supachok Thainoi, Somchai Ratanathammaphan, N. Pankaow
Publikováno v:
physica status solidi c. 9:1540-1542
In this contribution, we have demonstrated the fabrication of tensile strained GaP nanostructures on GaAs (100) substrates by droplet epitaxy using molecular beam epitaxy. The GaP nanostructures are ring-like structure due to crystallization with low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bc5e3cd2f71e22a12663593af8b047c
https://doi.org/10.1002/pssc.201100798
https://doi.org/10.1002/pssc.201100798
Autor:
Kamonchanok Khoklang, Patchareewan Prongjit, Somsak Panyakeow, Somchai Ratanathammaphan, Maetee Kunrugsa
Publikováno v:
2014 International Conference on Nanoscience and Nanotechnology.
We present the fabrication of GaSb quantum rings (QRs) on the GaAs (001) substrates by droplet epitaxy technique using solid-source molecular beam epitaxy (MBE). In droplet epitaxy process, Ga was deposited on GaAs surface to form liquid Ga droplets
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11fae90cad1eea1e449a9ef57dfd122
https://doi.org/10.1109/iconn.2014.6965255
https://doi.org/10.1109/iconn.2014.6965255
Autor:
Supachok Thainoi, Somchai Ratanathammaphan, P. Boonpeng, N. Pankaow, Patchareewan Prongjit, Somsak Panyakeow
Publikováno v:
AIP Conference Proceedings.
We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In0.15Ga0.85As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1445e5288bd3e31af3ee3ee26f467a
https://doi.org/10.1063/1.4848482
https://doi.org/10.1063/1.4848482
Type-II recombination dynamics of tensile-strained GaP quantum dots in GaAs grown by droplet epitaxy
Autor:
Kazuaki Sakoda, Takashi Kuroda, Patchareewan Prongjit, Takaaki Mano, Somchai Ratanathammaphan, Neul Ha
Publikováno v:
Applied Physics Letters. 109:171902
We use droplet epitaxy to create tensile-strained GaP quantum dots in a GaAs matrix. A strong biaxial tensile strain leads to the formation of a type-II band lineup with a transition energy lower than the bulk GaAs band gap. The luminescence transien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b51f88fd92f5a57ff0e9576f8056e9
https://doi.org/10.1063/1.4965873
https://doi.org/10.1063/1.4965873
Autor:
Patchareewan Prongjit, Somchai Ratanathammaphan, Neul Ha, Takaaki Mano, Kazuaki Sakoda, Takashi Kuroda
Publikováno v:
Applied Physics Letters; 10/24/2016, Vol. 109 Issue 17, p171902-1-171902-4, 4p, 1 Diagram, 4 Graphs