Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Pat LaCour"'
Autor:
Neal Lafferty, Sagar Saxena, Keisuke Mizuuchi, Yuansheng Ma, Xima Zhang, Pat Lacour, Alex Tritchkov, Farah Huq Kmiec, John Sturtevant
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b658ffaf767d052f91daf8f9d4e205b
https://doi.org/10.1117/12.2647882
https://doi.org/10.1117/12.2647882
Autor:
Sherif Hany Mousa, Zhenguo Zheng, Ashutosh Rathi, Jun Yao, Feng Yaobin, Srividya Jayaram, Pat LaCour, Lei Zhang
Publikováno v:
Optical Microlithography XXXIII.
Key factors for maximizing yield in a modern semiconductor fab for Memory device manufacturing include wafer critical dimension uniformity and accuracy control. Resolution Enhancement Techniques (RET) solutions for the highly repetitive arrayed memor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da51bc6aea6455c2fc9fc466f64f736
https://doi.org/10.1117/12.2551829
https://doi.org/10.1117/12.2551829
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
Sub-Resolution Assist Features (SRAFs) have emerged as a key technology to enable semiconductor manufacturing for advanced technology nodes. SRAF placement is required to adhere to manufacturability constraints (MRC). MRC specifications are distance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::601ccfc6abbf7b806fe2e356d57a466c
https://doi.org/10.1117/12.2193023
https://doi.org/10.1117/12.2193023
Publikováno v:
SPIE Proceedings.
Traditional SRAF placement has been governed by a generation of rules that are experimentally derived based on measurements on test patterns for various exposure conditions. But with the shrinking technology nodes, there are increased challenges in c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c795137fae722d36cbfe6e02d95ba30
https://doi.org/10.1117/12.2031789
https://doi.org/10.1117/12.2031789
Autor:
Omar El-Sewefy, Pat LaCour, GekSoon Chua, Dongqing Zhang, Vlad Liubich, Aasutosh Dave, Alvin Chua, Ying Gong, YeeMei Foong, Alex Tritchkov, Jacky Cheng, Robin Chia
Publikováno v:
SPIE Proceedings.
Source Mask Optimization (SMO) has become an integral part of resolution enhancement techniques (RET) for almost all critical layers at advanced technology nodes. Over the past couple of years, various flows have emerged for integrating SMO into main
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775e8853fdca53bffa0a96622b712946
https://doi.org/10.1117/12.2013605
https://doi.org/10.1117/12.2013605
Publikováno v:
SPIE Proceedings.
Traditional SRAF placement has been governed by a generation of rules that are experimentally derived based on measurements on test patterns for various exposure conditions. But with the shrinking technology nodes, there are increased challenges in c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c35c598a728511bd2c9531d575b42697
https://doi.org/10.1117/12.2011611
https://doi.org/10.1117/12.2011611
Publikováno v:
SPIE Proceedings.
With 20nm production becoming a reality, research has started to focus on the technology needs for 14nm. The LELE double patterning used in 20nm production will not be able to resolve M1 for 14nm. Main competing enabling technologies for the 14nm M1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a342038b9a14b22416c41faf5961cadd
https://doi.org/10.1117/12.916610
https://doi.org/10.1117/12.916610
Autor:
Pat LaCour, Omar El-Sewefy, Alex Volkov, Evgueni Levine, Qiao Li, Christopher E. Reid, Kellen Arb, Pradiptya Ghosh, David Abercrombie
Publikováno v:
SPIE Proceedings.
Litho-etch-litho-etch (LELE) is the double patterning (DP) technology of choice for 20 nm contact, via, and lower metal layers. We discuss the unique design and process characteristics of LELE DP, the challenges they present, and various solutions. c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d13379c476317e8a5fbf74e60a738d1a
https://doi.org/10.1117/12.898895
https://doi.org/10.1117/12.898895
Publikováno v:
SPIE Proceedings.
Sub-Resolution Assist Features (SRAFs) have been extensively used to improve the process margin for isolated and semi-isolated features. It has been shown that compared to rule-based SRAFs, model-based placement of SRAFs can result in better overall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0504f64a50b596784efc32a77bb4357
https://doi.org/10.1117/12.879492
https://doi.org/10.1117/12.879492
Publikováno v:
SPIE Proceedings.
Sub-Resolution Assist Features (SRAFs) have been used extensively to improve the process latitude for isolated and semi-isolated features in conjunction with off-axis illumination. These SRAFs have typically been inserted based upon rules which assig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fdf7579f49d7a1b1d3642b5eea1acaa
https://doi.org/10.1117/12.846620
https://doi.org/10.1117/12.846620