Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Passi, Vikram"'
Autor:
Pandey, Himadri, Morales, Jorge Daniel Aguirre, Kataria, Satender, Fregonese, Sebastien, Passi, Vikram, Iannazzo, Mario, Zimmer, Thomas, Alarcon, Eduard, Lemme, Max C.
Publikováno v:
Annalen der Physik, 529 (11), 1700106, 2017
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, whi
Externí odkaz:
http://arxiv.org/abs/2212.01877
Autor:
Gahoi, Amit, Wagner, Stefan, Bablich, Andreas, Kataria, Satender, Passi, Vikram, Lemme, Max C.
Publikováno v:
Solid-State Electronics, Volume 125, November, Pages 234-239, 2016
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electr
Externí odkaz:
http://arxiv.org/abs/2211.12415
Autor:
Passi, Vikram, Gahoi, Amit, Marin, Enrique G., Cusati, Teresa, Fortunelli, Alessandro, Iannaccone, Giuseppe, Fiori, Gianluca, Lemme, Max C.
Publikováno v:
Advanced Materials Interfaces, 6(1): 1801285, 2019
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact. Specific c
Externí odkaz:
http://arxiv.org/abs/1807.04772
Autor:
Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V., Haberer, Danny, Fischer, Felix R., Grüneis, Alexander, Lemme, Max C.
Publikováno v:
ACS Applied Materials & Interfaces, 2018
We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthes
Externí odkaz:
http://arxiv.org/abs/1803.07155
Autor:
Yim, Chanyoung, Passi, Vikram, Lemme, Max C., Duesberg, Georg S., Pallechi, Cormac Ó Coileáin Emiliano, Fadil, Dalal, McEvoy, Niall
Platinum diselenide (PtSe2) is an exciting new member of the two-dimensional (2D) transition metal dichalcogenide (TMD) family. it has a semimetal to semiconductor transition when approaching monolayer thickness and has already shown significant pote
Externí odkaz:
http://arxiv.org/abs/1707.06824
Autor:
Riazimehr, Sarah, Bablich, Andreas, Schneider, Daniel, Kataria, Satender, Passi, Vikram, Yim, Chanyoung, Duesberg, Georg S., Lemme, Max C.
Publikováno v:
Solid-State Electronics, 115, 207-212, 2016
We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from the diode
Externí odkaz:
http://arxiv.org/abs/1509.01021
Autor:
Passi, Vikram, Sodervall, Ulf, Nilsson, Bengt, Petersson, Goran, Hagberg, Mats, Krzeminski, Christophe, Dubois, Emmanuel, Bois, Bert Du, Raskin, Jean-Pierre
Publikováno v:
Microelectronic Engineering 95 (2012) 83-89
Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more t
Externí odkaz:
http://arxiv.org/abs/1207.2402
Autor:
Passi, Vikram, Lecestre, Aurélie, Krzeminski, Christophe, Larrieu, Guilhem, Dubois, Emmanuel, Raskin, Jean-Pierre
Publikováno v:
Microelectronics Engineering 87, 10 (2009) 1872
Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, i
Externí odkaz:
http://arxiv.org/abs/1109.5187
Autor:
Gahoi, Amit, Wagner, Stefan, Bablich, Andreas, Kataria, Satender, Passi, Vikram, Lemme, Max C.
Publikováno v:
In Solid State Electronics November 2016 125:234-239
Autor:
Riazimehr, Sarah, Bablich, Andreas, Schneider, Daniel, Kataria, Satender, Passi, Vikram, Yim, Chanyoung, Duesberg, Georg S., Lemme, Max C.
Publikováno v:
In Solid State Electronics January 2016 115 Part B:207-212