Zobrazeno 1 - 10
of 926
pro vyhledávání: '"Passacantando, M"'
Autor:
Urban, F., Giubileo, F., Grillo, A., Iemmo, L., Luongo, G., Passacantando, M., Foller, T., Madauß, L., Pollmann, E., Geller, M. P., Oing, D., Schleberger, M., Di Bartolomeo, A.
Publikováno v:
2019 2D Materials 6 045049
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal str
Externí odkaz:
http://arxiv.org/abs/2306.15353
Autor:
Pelella, A., Kharsah, O., Grillo, A., Urban, F., Passacantando, M., Giubileo, F., Iemmo, L., Sleziona, S., Pollmann, E., Madauß, L., Schleberger, M., Di Bartolomeo, A.
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the
Externí odkaz:
http://arxiv.org/abs/2004.00903
Autor:
Di Bartolomeo, A., Urban, F., Pelella, A., Grillo, A., Passacantando, M., Liu, X., Giubileo, F.
Publikováno v:
Nanotechnology 2020
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is us
Externí odkaz:
http://arxiv.org/abs/2002.09785
Autor:
Di Bartolomeo, A., Pelella, A., Urban, F., Grillo, A., Iemmo, L., Passacantando, M., Liu, X., Giubileo, F.
Publikováno v:
Adv. Electron. Mater. 2020, 2000094
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with th
Externí odkaz:
http://arxiv.org/abs/2002.05454
Autor:
Iemmo, L., Di Bartolomeo, A., Giubileo, F., Luongo, G., Passacantando, M., Niu, G., Hatami, F., Skibitzki, O., Schroeder, T.
Publikováno v:
2017 Nanotechnology 28 495705
We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a sca
Externí odkaz:
http://arxiv.org/abs/1708.01877
Autor:
Giubileo, F., Iemmo, L., Luongo, G., Martucciello, N., Raimondo, M., Guadagno, L., Passacantando, M., Lafdi, K., Di Bartolomeo, A.
Publikováno v:
J Mater Sci (2017) 52:6459-6468
We produce 120 um thick buckypapers from aligned carbon nanotubes. Transport characteristics evidence ohmic behavior in a wide temperature range, non linearity appearing in the current-voltage curves only close to 4.2 K. The temperature dependence of
Externí odkaz:
http://arxiv.org/abs/1701.07611
Hybrid polyphenolic Network/SPIONs aggregates with potential synergistic effects in MRI applications
Autor:
Lazzarini, A., Colaiezzi, R., Galante, A., Passacantando, M., Capista, D., Ferella, F., Alecci, M., Crucianelli, M.
Publikováno v:
In Results in Chemistry January 2022 4
Autor:
Giubileo, F., Di Bartolomeo, A., Martucciello, N., Romeo, F., Iemmo, L., Romano, P., Passacantando, M.
Publikováno v:
Nanomaterials 2016, 6, 206
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resist
Externí odkaz:
http://arxiv.org/abs/1608.00716
Autor:
Lazzarini, A., Colaiezzi, R., Passacantando, M., D'Orazio, F., Arrizza, L., Ferella, F., Crucianelli, M.
Publikováno v:
In Journal of Physics and Chemistry of Solids June 2021 153
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