Zobrazeno 1 - 10
of 1 317
pro vyhledávání: '"Passacantando, A"'
Autor:
Persichetti, Luca, Giorgi, Giacomo, Lozzi, Luca, Passacantando, Maurizio, Bournel, Fabrice, Gallet, Jean-Jacques, Camilli, Luca
We investigated the reactivity of layered GeAs in the presence of oxygen and/or water using synchrotron-based X-ray photoelectron spectroscopy and ab initio calculations.
Externí odkaz:
http://arxiv.org/abs/2411.03949
The number of new cancer cases is expected to increase by about 50% in the next 20 years, and the need for chemotherapy treatments will increase accordingly. Chemotherapy treatments are usually performed in outpatient cancer centers where patients af
Externí odkaz:
http://arxiv.org/abs/2309.07532
Autor:
Urban, F., Giubileo, F., Grillo, A., Iemmo, L., Luongo, G., Passacantando, M., Foller, T., Madauß, L., Pollmann, E., Geller, M. P., Oing, D., Schleberger, M., Di Bartolomeo, A.
Publikováno v:
2019 2D Materials 6 045049
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal str
Externí odkaz:
http://arxiv.org/abs/2306.15353
Autor:
Lanza, Giacomo1 (AUTHOR) giacomo.lanza@unipi.it, Passacantando, Mauro2 (AUTHOR), Scutellà, Maria Grazia1 (AUTHOR)
Publikováno v:
Flexible Services & Manufacturing Journal. Sep2024, Vol. 36 Issue 3, p994-1045. 52p.
Autor:
Pelella, Aniello, Grillo, Alessandro, Urban, Francesca, Giubileo, Filippo, Passacantando, Maurizio, Pollmann, Erik, Sleziona, Stephan, Schleberger, Marika, Di Bartolomeo, Antonio
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good m
Externí odkaz:
http://arxiv.org/abs/2008.09910
Autor:
Giubileo, Filippo, Di Bartolomeo, Antonio, Zhong, Yun, Zhao, Songrui, Passacantando, Maurizio
We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anod
Externí odkaz:
http://arxiv.org/abs/2008.03003
Autor:
Di Bartolomeo, Antonio, Grillo, Alessandro, Giubileo, Filippo, Camilli, Luca, Sun, Jianbo, Capista, Daniele, Passacantando, Maurizio
Publikováno v:
Journal of Physics D: Applied Physics 2021, 54 105302
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the
Externí odkaz:
http://arxiv.org/abs/2007.05837
Autor:
Giubileo, Filippo, Passacantando, Maurizio, Urban, Francesca, Grillo, Alessandro, Iemmo, Laura, Pelella, Aniello, Goosney, Curtis, LaPierre, Ray, Di Bartolomeo, Antonio
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-
Externí odkaz:
http://arxiv.org/abs/2004.13340
Autor:
Pelella, A., Kharsah, O., Grillo, A., Urban, F., Passacantando, M., Giubileo, F., Iemmo, L., Sleziona, S., Pollmann, E., Madauß, L., Schleberger, M., Di Bartolomeo, A.
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the
Externí odkaz:
http://arxiv.org/abs/2004.00903
A global optimization approach for solving non-monotone equilibrium problems (EPs) is proposed. The class of (regularized) gap functions is used to reformulate any EP as a constrained global optimization program and some bounds on the Lipschitz const
Externí odkaz:
http://arxiv.org/abs/2002.12198