Zobrazeno 1 - 10
of 147
pro vyhledávání: '"Pascal Normand"'
Autor:
Nikolaos Vasileiadis, Alexandros Mavropoulis, Panagiotis Loukas, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis
Publikováno v:
2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC).
Autor:
Vasileios Ntinas, Ioannis Karafyllidis, Georgios Ch. Sirakoulis, Iosif-Angelos Fyrigos, Pascal Normand, Vassilios Ioannou-Sougleridis, Nikolaos Vasileiadis, Panagiotis Dimitrakis, Rafailia-Eleni Karamani
Publikováno v:
ISCAS
Research progress in edge computing hardware, capable of demanding in-the-field processing tasks with simultaneous memory and low power properties, is leading the way towards a revolution in IoT hardware technology. Resistive random access memories (
Autor:
Panagiotis Loukas, Georgios Ch. Sirakoulis, Pascal Normand, Vassilios Ioannou-Sougleridis, Vasileios Ntinas, Nikolaos Vasileiadis, Panagiotis Karakolis, Panagiotis Dimitrakis, Iosif-Angelos Fyrigos, Ioannis Karafyllidis
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices exhibit usual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47df78f4ed98592a2547cae4d564c1ca
http://arxiv.org/abs/2103.09931
http://arxiv.org/abs/2103.09931
Publikováno v:
Microelectronic Engineering. 174:74-79
A photovoltaic device based on plasma-etched silicon nanopillar (SiNP) arrays is demonstrated. Highly ordered, aligned and perpendicular to the substrate pure crystalline silicon nanopillars, that follow the axial p-n junction geometry, are fabricate
Autor:
L. Sygelou, Vasileios Ntinas, Panagiotis Karakolis, Pascal Normand, G. Ch. Sirakoulis, Panagiotis Dimitrakis, Ioannis Karafyllidis, Iosif-Angelos Fyrigos
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
NANOARCH
Universitat Politècnica de Catalunya (UPC)
NANOARCH
In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3879737d1e291adcb7784a7431d7f018
https://hdl.handle.net/2117/344209
https://hdl.handle.net/2117/344209
Autor:
Christos Pandis, Konstantinos Beltsios, Panagiotis Argitis, Stella Kennou, Polycarpos Pissis, Antonios M. Douvas, Panagiotis Dimitrakis, E. Kapetanakis, Vassilios Saltas, Pascal Normand, Paschalis Gkoupidenis, Apostolos Kyritsis
Publikováno v:
The Journal of Physical Chemistry C. 120:21254-21262
A method is developed for extracting the direct current conductivity (σdc) of ion-conducting materials from frequency- and time-domain dielectric spectroscopy measurements. This method exploits the electrode polarization effects arising from the cha
Autor:
Mikko Ritala, Pascal Normand, Thanassis Speliotis, Kenichiro Mizohata, Vassilios Ioannou-Sougleridis, Kaupo Kukli, Markku Leskelä, Jaakko Niinistö, Panagiotis Dimitrakis, Nikolaos Nikolaou
Publikováno v:
Microelectronic Engineering. 159:127-131
The electrical and chemical properties of atomic layer deposited (ALD) Al2O3 layers and their dependence on the oxygen source (water or oxygen plasma) are examined. Oxygen plasma ALD leads to Al2O3 layers with lower hydrogen contamination. The alumin
Autor:
G. Benassayg, E. Bolomyti, Vassilios Ioannou-Sougleridis, Nikos Glezos, Pascal Normand, Panagiotis Dimitrakis
Publikováno v:
Microelectronic Engineering. 159:75-79
In this work we examine the high temperature charge retention characteristics of modified SONOS (polySi-oxide-nitride-oxide-Si) capacitors. The modified SONOS structures were synthesized by Si low-energy implantation (1keV) into oxide-nitride (ON) st
Autor:
E. Kapetanakis, Pascal Normand, Charalampos Katsogridakis, Panagiotis Argitis, Dimitra Dimotikali
Publikováno v:
Advanced Electronic Materials. 6:2000238
Autor:
Georgios Ch. Sirakoulis, Ioannis Karafyllidis, Vasileios Ntinas, Pascal Normand, Iosif-Angelos Fyrigos, Panagiotis Dimitrakis, Panagiotis Karakolis
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
During the last years, Resistive Random-Access Memories (ReRAMs or RRAMs) stimulated growing attention as promising non-volatile (NV) candidate memories to surpass existing storage devices while exhibiting excellent performance, reliability and low-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ea54d763dfdfc8bb33e468206d09aaa
https://hdl.handle.net/2117/343970
https://hdl.handle.net/2117/343970