Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Pascal Fouillat"'
Publikováno v:
Journal of Integrated Circuits and Systems. 1:1-4
The Editorial Board has the satisfaction to launch the first edition of the Journal of Integrated Circuits and Systems - JICS. This journal will present state-of-art papers on Integrated Circuits and Systems areas. It is an effort of both Brazilian M
Publikováno v:
IEEE Transactions on Nuclear Science. 55:1974-1981
This paper presents a simulation and experimental study of the analog single-event transient sensitivity of wide bandwidth operational amplifiers. Architecture effects are presented that could influence ASIC design and COTS selection.
Autor:
Dean Lewis, Gérald Haller, Philippe Perdu, Pascal Fouillat, F. Essely, V. Goubier, Aziz Machouat, Vincent Pouget
Publikováno v:
Microelectronics Reliability. 48:1333-1338
Dynamic laser stimulation (DLS) techniques based on operating integrated circuits (ICs) become a standard failure analysis technique for soft defect localization. This type of defect is getting more and more common with advanced technology; therefore
Autor:
Sayfe Kiaei, W. Chen, Keith E. Holbert, Bert Vermeire, Pascal Fouillat, G.K. Gentry, Vincent Pouget, Hugh J. Barnaby, Bertan Bakkaloglu
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3449-3454
Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in a 0.13 mum CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with to
Autor:
Vincent Pouget, Pascal Fouillat, W.T. Holman, M.C. Maher, S. P. Buchner, Y. Boulghassoul, Lloyd W. Massengill, Dale McMorrow, Christian Poivey, J.W. Howard, M.W. Savage
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3529-3536
A new category of analog single-event transients (SETs) with millisecond-long durations have been experimentally observed in the LM6144 operational amplifier. It is the first time that events with such extreme widths are under investigation in a line
Autor:
Thierry Carriere, R. Gaillard, Florent Miller, B. Sagnes, P. Poirot, J.-M. Palau, R. Dufayel, N. Buard, Pascal Fouillat
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3708-3715
This work presents new results to compare EADS CCR laser experiments and heavy ion tests. More precisely, this study describes the influence of the laser spot size on the threshold energy of the SEU cross-section curves. A new methodology is proposed
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:327-339
This paper describes the use of a pulsed laser for studying radiation-induced single-event transients in integrated circuits. The basic failure mechanisms and the fundamentals of the laser testing method are presented. Sample results are presented to
Autor:
D. Lewis, Guofu Niu, Vincent Pouget, W. Chen, Pascal Fouillat, Yann Deval, John D. Cressler, Hugh J. Barnaby
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2081-2087
The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are investigated. Laser testing and simulations indicate that ion strikes on critical transistors cause distortions in the oscillating output. The time it takes
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2003, 43, pp.1
Microelectronics Reliability, Elsevier, 2003, 43, pp.1
Publikováno v:
Microelectronics Reliability. 43:1577-1582