Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Pascal Fonteneau"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:2835-2840
Knowing exactly potentials’ distribution in pixels is a key to ensure that electronretention and transport enable a good pixel operation. Moreover, it is also a key parameter for controlof charge storage capabilityor fullwell capacity, strongly dri
Publikováno v:
IEEE Electron Device Letters. 40:1852-1855
The capability of Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) to operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) technology. The operation mechanism is band-modulation which enables remarkab
Autor:
Christopher Townsend, G. Mugny, Matteo Vignetti, Arnaud Tournier, Jeremie Teyssier, Jean-Raphael Bezal, Raoul Vergara, Pascal Fonteneau, Kevin Channon, Arnaud Authie, Thomas Bouchet, Joao Miguel Melo Santos, Francois Agut, Frederic Lalanne, Bruce Rae, Damien Miclo, Yann Desprez, Pascal Mellot, Laurent Simony, Sara Pellegrini, David Hadden, Stephane Drouard, Franck Hingant, Vincent Farys, Francois Roy, Gregory Bochet, Blandine Roig, Thibault Augey, Cedric Tubert, Celine Mas, Aurelien Mazard, Boris Rodrigues Goncalves
Publikováno v:
ESSCIRC
This paper describes a 4.3e- RMS low noise 4.6µm Time-of-Flight pixel based on charge domain with kTC noise removal designed to enhance depth camera image quality. The pixel takes advantage of 6µm gradually doped epitaxial layer for 88.5% demodulat
Autor:
Cedric Tubert, Pascal Mellot, Yann Desprez, Celine Mas, Arnaud Authie, Laurent Simony, Gregory Bochet, Stephane Drouard, Jeremie Teyssier, Damien Miclo, Jean-Raphael Bezal, Thibault Augey, Franck Hingant, Thomas Bouchet, Blandine Roig, Aurelien Mazard, Raoul Vergara, Gabriel Mugny, Arnaud Tournier, Frederic Lalanne, Francois Roy, Boris Rodrigues Goncalves, Matteo Vignetti, Pascal Fonteneau, Vincent Farys, Francois Agut, Joao Miguel Melo Santos, David Hadden, Kevin Channon, Christopher Townsend, Bruce Rae, Sara Pellegrini
Publikováno v:
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
Autor:
Pascal Fonteneau
Contrairement à ce que laisse entendre la croyance populaire, la vocation ne se limite pas à certaines professions privilégiées. Chacun possède en soi la capacité de la découvrir et de la définir selon ses propres termes. Cependant, parfois,
Autor:
Sorin Cristoloveanu, C. Fenouillet-Beranger, Philippe Ferrari, Yohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
Solid-State Electronics, Elsevier, 2016, 116, pp.8-11. ⟨10.1016/j.sse.2015.10.010⟩
We propose and demonstrate experimentally a band-modulation device with extremely sharp switching capability. The Z 3 -FET (Zero gate, Zero swing and Zero impact ionization) has no top gate, is processed with FDSOI CMOS technology, and makes use of t
Autor:
Kyung Hwa Lee, S. Sato, Pascal Fonteneau, H. El Dirani, Sorin Cristoloveanu, Maryline Bawedin
Publikováno v:
2018 ESSDERC Proceedings
2018 ESSDERC-48th European Solid-State Device Research Conference (ESSDERC)
2018 ESSDERC-48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.74-77, ⟨10.1109/ESSDERC.2018.8486915⟩
ESSDERC
2018 ESSDERC-48th European Solid-State Device Research Conference (ESSDERC)
2018 ESSDERC-48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.74-77, ⟨10.1109/ESSDERC.2018.8486915⟩
ESSDERC
session A4L-F: Emerging Devices and Applications; International audience; A logic switch for integrated circuits is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z 2 -FET (Zero Impact Ionization and Zero Subthreshold Slope F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04ae3768ecc14418592d392e8ec5b63c
https://hal.archives-ouvertes.fr/hal-02007707
https://hal.archives-ouvertes.fr/hal-02007707
Autor:
Joris Lacord, Campbell Millar, Mukta Singh Parihar, Pascal Fonteneau, Hassan El Dirani, Yong Tae Kim, Sorin Cristoloveanu, Maryline Bawedin, Jean-Charles Barbe, Francisco Gamiz, Noel Rodriguez, Siegfried Karg, Paul Wells, Asen Asenov, Binjie Cheng, Carlos Navarro, M. Duan, Philippe Galy, Cyrille Le Royer, Fikru Adamu-Lema
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
Digibug. Repositorio Institucional de la Universidad de Granada
instname
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
Digibug. Repositorio Institucional de la Universidad de Granada
instname
This article has been accepted for publication by IEEE "Navarro Moral, C.; et al. Extended analysis of the Z2-FET: Operation as capacitor-less eDRAM. IEEE Transactions on Electron Devices, 64(11): 4486-4491 (2017). DOI: 10.1109/TED.2017.2751141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68bcecf5bf95538fa18e097025f95e0e
https://hal.archives-ouvertes.fr/hal-02006362
https://hal.archives-ouvertes.fr/hal-02006362
Autor:
Gerard Ghibaudo, Sorin Cristoloveanu, H. El Dirani, Yuan Taur, Sebastien Martinie, Kyung Hwa Lee, X. Mescot, Joris Lacord, J.-E. Broquin, Mukta Singh Parihar, Ph. Galy, M. Bawedin, Yong Tae Kim, Francisco Gamiz, Pascal Fonteneau, J-Ch. Barbe
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩
HAL
20th International Conference on Insulating Films on Semiconductors (INFOS 2017)
20th International Conference on Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany
Microelectronic Engineering, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩
Microelectronic Engineering, Elsevier, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩
HAL
20th International Conference on Insulating Films on Semiconductors (INFOS 2017)
20th International Conference on Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany
Microelectronic Engineering, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩
International audience; A systematic study of a capacitorless 1T-DRAM fabricated in 28 nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z2-FET memory cell features a large current sense margin and small OFF-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e3d61f1fe991f951c7211f88f2b242e
https://hal.archives-ouvertes.fr/hal-01948006
https://hal.archives-ouvertes.fr/hal-01948006
Autor:
Sorin Cristoloveanu, Cyrille Le Royer, Binjie Cheng, Pascal Fonteneau, Mukta Singh Parihar, Sebastien Martinie, Yuan Taur, X. Mescot, Francisco Gamiz, Philippe Galy, Jean-Charles Barbe, M. Bawedin, Kyung Hwa Lee, Carlos Navarro, Joris Lacord, Asen Asenov, Hassan El Dirani
Publikováno v:
2017 IMW Proceedings
2017 IEEE International Memory Workshop (IMW)
2017 IEEE International Memory Workshop (IMW), May 2017, Monterey, United States. pp.103-106, ⟨10.1109/IMW.2017.7939093⟩
Publons
2017 IEEE International Memory Workshop (IMW)
2017 IEEE International Memory Workshop (IMW), May 2017, Monterey, United States. pp.103-106, ⟨10.1109/IMW.2017.7939093⟩
Publons
session FRAM and DRAM; International audience; This work highlights the features of Z2-FET capacitorless 1T-DRAM describing its operation in detail. The Z2-FET memory cell fabricated with FDSOI technology delivers large current sense margin along wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ec32a0d03a9da02ccf3efd69e11d9df
https://hal.archives-ouvertes.fr/hal-02007121
https://hal.archives-ouvertes.fr/hal-02007121