Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Pascal Bancken"'
Autor:
V.H. Nguyen, Romano Hoofman, Roel Daamen, G. J. A. M. Verheijden, Pascal Bancken, Aurelie Humbert
Publikováno v:
Microelectronic Engineering. 84:2177-2183
Advanced copper interconnects need porous low-k materials to obtain low interline capacitances. A number of porous low-k integration issues have however delayed the introduction of these fragile dielectrics. Replacing the porous low-k dielectric by a
Autor:
J.C. Dupuy, G. Bryce, Nicolas Gaillard, S. Chhun, J. Vitiello, V. Girault, M. Hopstaken, J. Guillan, Joaquim Torres, L.G. Gosset, B. Van Schravendijk, J. Michelon, Pascal Bancken, S. Courtas, R. Gras, Marc Juhel, L. Pinzelli, C. Debauche
Publikováno v:
Microelectronic Engineering. 83:2094-2100
Self-aligned barriers are widely investigated either in replacement of dielectric liners to decrease the total interconnect k value or as a treatment prior standard dielectric barrier deposition to improve reliability performances. In this paper, a t
Autor:
Gerald Beyer, P. Herrero Bernabé, Romano Hoofman, J. Michelon, C. Bruynseraede, Rudy Caluwaerts, Pascal Bancken, J. P. Gueneau de Mussy, S. List, Jinju Lee
Publikováno v:
Microelectronic Engineering. 83:2150-2154
Dual damascene self-aligned air gap structures have been fabricated through selective removal of interline plasma-damaged SiOC material using dilute HF solutions after metal CMP. The extent of the gaps was shown to be tuneable. The creation of interl
Autor:
Alexis Farcy, D. Bouchu, F. Gaillard, Romano Hoofman, L.G. Gosset, Joaquim Torres, Pascal Bancken, V. Nguyen Hoang, Greja Johanna Adriana Maria Verheijden, J. Michelon, T. Vandeweyer, Ph. Lyan, Roel Daamen, J. de Pontcharra, Vincent Arnal
Publikováno v:
Microelectronic Engineering. 82:321-332
The integration of air gaps for advanced Cu interconnects is mandatory to achieve the performances required for high performance integrated circuits (ICs). The interest of their introduction as a function of the chosen architecture, i.e. hybrid (i.e.
Autor:
Romano Hoofman, L. Chen, Aurelie Humbert, Pascal Bancken, J.K. Cheng, A. Yang, T. Martens, J. Waeterloos, D. Emur Badaroglu, V.H. Nguyen, J. Michelon, Roel Daamen, G. J. A. M. Verheijden
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
In this work, we propose and verify a robust dual damascene air gap architecture, which avoids the increasing complexity and cost normally associated with current multilevel air gap integration. Air gap packaging reliability was also addressed showin
Autor:
J. Waeterloos, Pascal Bancken, Romano Hoofman, Steven J. Rozeveld, V.H. Nguyen, J. Michelon, E. Beach, Gerald Beyer, Rudy Caluwaerts
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
As device dimensions scale down, the back-end-of-line dimensions scale down as well, which results in an increasing resistance-capacitance delay of the interconnect. In order to compensate for the increase in the capacitance part, porous low-k dielec
Autor:
V. Nguyen Hoang, Greja Johanna Adriana Maria Verheijden, Pascal Bancken, Roel Daamen, T. Vandeweyer, J. Michelon, M.K. Gallagher, Romano Hoofman
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
First promising results including reliability and electromigration of an extendable air gap integration approach obtaining mechanically stable air cavities at the inter-metal dielectric (IMD) level are presented. Extraction of the effective dielectri
Autor:
J. Michelon, Romano Hoofman, Vincent Arnal, O. Hinsinger, Aurelie Humbert, J.F. Guillaumond, Laurent-Georges Gosset, C. Guedj, L. Michaelson, Cindy K. Goldberg, Gérard Passemard, Greja Johanna Adriana Maria Verheijden, Joaquim Torres, W Besling, Dirk J. Gravesteijn, Pascal Bancken, Lucile Arnaud, Roel Daamen, Vincent Jousseaume, Robert Fox
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
The continuous downscaling of interconnect dimensions in combination with the introduction of porous low-k materials has increased the number of integration challenges tremendously. The paper focuses mainly on the impact of porous low-k dielectrics o
Autor:
W.B. van Noort, R.J. Havens, Roel Daamen, C. Detcheverry, L. F. Tiemeijer, Greja Johanna Adriana Maria Verheijden, Pascal Bancken
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2005..
A 2 times 2 /spl mu/m, dual damascene, dual metal Cu in SiLK/spl trade/ process on 200 mm high-resistivity silicon wafers is presented. The lines and spaces in both metal layers can be patterned to submicron dimensions. The extremely low specific con
Autor:
R.J. Havens, C. Detcheverry, Pascal Bancken, Roel Daamen, V.H. Nguyen, Greja Johanna Adriana Maria Verheijden, W.D. van Noort, Andreas Bernardus Maria Jansman
Publikováno v:
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
The performance of 2 /spl mu/m thick damascene Cu lines embedded in low K material are evaluated. The process is well control over a 200 mm wafer, provided that tiling is used. A minimum linewidth of 560 nm is achieved. The RF performance of substrat