Thermal management of electronic devices by composite materials integrated in silicon

Autor: Nathalie Rolland, C. Kinkelin, Malek Zegaoui, Sandrine Lhostis, Frédéric Lefèvre, Y. Kaplan, Emmanuel Ollier, B. Descouts, H. Le Poche, Stéphane Lips, Pascal Ancey, V. Remondière, A.L. Seiler, Paul-Alain Rolland, U. Soupremanien, Jean Dijon

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2014, 127, pp.28-33. ⟨10.1016/j.mee.2014.03.016⟩
Microelectronic Engineering, 2014, 127, pp.28-33. ⟨10.1016/j.mee.2014.03.016⟩

As the power of electronic systems is increasing, thermal fluxes are getting higher, up to more than 100 W/cm 2 in the more critical cases. They result in hot spots with various consequences, especially performance reduction and reliability issues. M

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eeefcb53afb5ba5772dea62471816546
https://doi.org/10.1016/j.mee.2014.03.016

Characterization and modeling of RF substrate coupling effects in 3D integrated circuit stacking

Autor: Bernard Flechet, E. Eid, J. Roullard, L. Cadix, P. Leduc, S. Capraro, Francis Calmon, Pascal Ancey, O. Valorge, Alexis Farcy, Cedric Bermond, Thierry Lacrevaz

Publikováno v: Microelectronic Engineering. 88:729-733

This work addresses parasitic substrate coupling effects in 3D integrated circuits due to Through Silicon Vias (TSV). Electrical characterizations have been performed on dedicated test structures in order to extract electrical models of substrate cou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71a08d9840ff2b4d35f26084ca98fffc
https://doi.org/10.1016/j.mee.2010.07.013

Integration of high-performance RF passive modules (MIM capacitors and inductors) in advanced BEOL

Autor: M. Thomas, Alexis Farcy, Joaquim Torres, J.F. Carpentier, Pascal Ancey

Publikováno v: Microelectronic Engineering. 85:1940-1946

Passive components are key elements for the integration of system-on-chips, fixing circuit performance and down-scaling capability. The integration of MIM capacitors and inductors among Cu BEOL of CMOS technologies faces many challenges and requires

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6f4a3500b09b4771e0cb8bb0803cf1d
https://doi.org/10.1016/j.mee.2008.03.017

High pass filter with above IC integrated SrTiO3 high K MIM capacitors

Autor: Laurent Ulmer, Jean-Pierre Blanc, Emmanuel Defay, Bernard Andre, Emmanuelle Serret, Sophie Verrun, Philippe Delpech, Marc Aid, Pierre Garrec, Julie Guillan, Denis Pellissier, Pascal Ancey, David Wolozan

Publikováno v: Solid-State Electronics. 51:1624-1628

This paper describes realization and characterization of SrTiO 3 (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors in order to realize a high pass filter. Surf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3cfe2cfb16c8c58c781527689b149dad
https://doi.org/10.1016/j.sse.2007.09.036

Bidirectional ferromagnetic spiral inductors using single deposition

Autor: Guillaume Bouche, Bernard Viala, Sandrine Couderc, Pascal Ancey, A.S. Royet

Publikováno v: IEEE Transactions on Magnetics. 41:3544-3549

Size reduction for spiral inductors is investigated. We reveal bidirectional ferromagnetic inductors with an /spl sim/30% to 135% increase in L over the air-core value. This is advantageously realized by using single deposition. The realization uses

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce23eff4d24c51434f33c94b26866083
https://doi.org/10.1109/tmag.2005.854727