Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Pary Baluswamy"'
Publikováno v:
SPIE Proceedings.
Circuit layout and design rules have continued to shrink to the point where a few nanometers of pattern misalignment can negatively impact process capability and device yields. As wafer processes and film stacks have become more complex, overlay and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd589929ef1a8d2cfd7a14a8dd19d78b
https://doi.org/10.1117/12.2012672
https://doi.org/10.1117/12.2012672
Publikováno v:
SPIE Proceedings.
Unpolarized light has traditionally been used for photolithography. However, polarized light can improve contrast and exposure latitudes at high numerical aperture (NA), especially for immersion lithography with an NA > 1.0. As polarized light passes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5acef2b2f19900a25fe6927c470008ba
https://doi.org/10.1117/12.712251
https://doi.org/10.1117/12.712251
Autor:
Linda K. Somerville, Pary Baluswamy
Publikováno v:
SPIE Proceedings.
Flare has become a significant problem for low K1 lithography. Several authors have reported measurement of flare in projection lenses. Most of the work is based on the Flagello-Kirk method using resist clearing dose. To measure the flare reliably an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::533f893d2883605a32ed39b47ed7120b
https://doi.org/10.1117/12.535474
https://doi.org/10.1117/12.535474
Publikováno v:
SPIE Proceedings.
The lack of calibrated resist models has lead to a reliance on aerial images. This has limited capability of simulation to predict printed image shapes and CDs, especially in low K1 regimes. Calibration of resist models for matching simulation to pat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f2ce94794247d10b185c54f8adc754
https://doi.org/10.1117/12.485339
https://doi.org/10.1117/12.485339
Autor:
Richard D. Holscher, Pary Baluswamy
Publikováno v:
SPIE Proceedings.
Projection lens aberrations are typically modeled with Zernike polynomial coefficients. In this paper significant aberration terms that affect pattern placement error are identified using Design of Experiments. Simple models are developed for various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb3aea4d0014cddaf427bcf58cd92db
https://doi.org/10.1117/12.388966
https://doi.org/10.1117/12.388966
Autor:
Thomas R. Glass, Pary Baluswamy
Publikováno v:
SPIE Proceedings.
Most deep ultraviolet (DUV) resist models available today utilize the Dill parameters to characterize resist exposure. These models assume that the thickness of the resist remains constant through exposure and post-exposure bake (PEB). The thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f0a08570630545224c843e5f93fba11
https://doi.org/10.1117/12.310815
https://doi.org/10.1117/12.310815
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