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pro vyhledávání: '"Parthasarathy, Shyam"'
Autor:
Parthasarathy Shyam, Fanyi Meng, Kiat Seng Yeo, Kaixue Ma, Bo Yu, Purakh Raj Verma, Shaoqiang Zhang
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:3937-3949
In this paper, the stress memorization technique (SMT) effects upon ultra-wideband RF switch performance are investigated for the first time. Low insertion loss (IL), high isolation, ultra-wideband (dc to 50 GHz) single-pole double-throw (SPDT), and
Autor:
Kaixue Ma, Parthasarathy Shyam, Fanyi Meng, Bo Yu, Shaoqiang Zhang, Purakh Raj Verma, Kiat Seng Yeo
Publikováno v:
IEEE Transactions on Electron Devices. 64:3548-3554
This paper presents low insertion loss, high isolation, ultra-wideband double-pole-double-throw (DPDT) switch matrix designed in a 0.13- $\mu \text{m}$ commercial high resistivity trap-rich silicon-on-insulator (SOI) CMOS process for the first time.
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Publikováno v:
2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
Power Amplifier (PA) modules are becoming more and more complex in modern wireless systems. In order to meet the efficiency/linearity design schemes such as Envelope elimination and restoration (EER) and Envelope tracking (ET) are increasingly becomi
Autor:
Stamper, Anthony, Camillo-Castillo, Renata, Ding, Hanyi, Dunn, James, Jaffe, Mark, Jain, Vibhor, Joseph, Alvin, McCallum-Cook, Ian, Newton, Kim, Parthasarathy, Shyam, Rassel, Robert, Schmidt, Nicholas, Srihari, Srikanth, Wolf, Randy, Zierak, Michael
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits & Technology Meeting (BCTM); 2014, p25-28, 4p