PseudoSloan: A perimetric-complexity and area-controlled font for vision and reading research.

Autor: Vildavski VY; Wu Tsai Neurosciences Institute, Department of Psychology, Stanford University, California, USA.; vladvil@stanford.edu., Lo Verde L; Wu Tsai Neurosciences Institute, Department of Psychology, Stanford University, California, USA.; luca.loverde0@gmail.com., Blumberg G; Blumberg Communication Design, 309 Arden Road, Menlo Park, California, USA.; gail@blumbergdesign.com., Parsey J; Freelance Designer, 3810 Page Mill Road, Los Altos Hills, California, USA.; joss.parsey@gmail.com., Norcia AM; Wu Tsai Neurosciences Institute, Department of Psychology, Stanford University, California, USA.; amnorcia@stanford.edu.

Publikováno v: Journal of vision [J Vis] 2022 Sep 02; Vol. 22 (10), pp. 7.

Characterization of n-type regions in GaAs formed by silicon fluoride molecular ion implantations.

Autor: Gray, M. L., Parsey, J. M., Ahrens, R. E., Pearton, S. J., Short, K. T., Sargent, L., Blakemore, J. S.

Publikováno v: Journal of Applied Physics; 11/1/1989, Vol. 66 Issue 9, p4176, 5p

Surface polygonization on GaAs wafers.

Autor: Gray, M. L., Abemathy, C. R., Caruso, R., Jordan, A. S., Parsey, J. M.

Publikováno v: Journal of Applied Physics; 8/1/1988, Vol. 64 Issue 3, p1468, 4p, 5 Black and White Photographs

EL2 distributions in vertical gradient freeze GaAs crystals.

Autor: Gray, M. L., Sargent, L., Blakemore, J. S., Parsey, J. M., Clemans, J. E.

Publikováno v: Journal of Applied Physics; 6/15/1988, Vol. 63 Issue 12, p5689, 5p

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric.

Autor: Moens, P., Liu, C., Banerjee, A., Vanmeerbeek, P., Coppens, P., Ziad, H., Constant, A., Li, Z., De Vleeschouwer, H., Roig-Guitart, J., Gassot, P., Bauwens, F., De Backer, E., Padmanabhan, B., Salih, A., Parsey, J., Tack, M.

Publikováno v: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2014, p374-377, 4p