Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Park, YoungJu"'
Direct view of gate-tunable miniband dispersion in graphene superlattices near the magic twist angle
Autor:
Jiang, Zhihao, Lee, Dongkyu, Jones, Alfred J. H., Park, Youngju, Hsieh, Kimberly, Majchrzak, Paulina, Sahoo, Chakradhar, Nielsen, Thomas S., Watanabe, Kenji, Taniguchi, Takashi, Hofmann, Philip, Miwa, Jill A., Chen, Yong P., Jung, Jeil, Ulstrup, Søren
Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena are ascribed to a combination of flat bands and strong Coulomb interact
Externí odkaz:
http://arxiv.org/abs/2405.17148
Autor:
Zhang, Hongyun, Li, Qian, Park, Youngju, Jia, Yujin, Chen, Wanying, Li, Jiaheng, Liu, Qinxin, Bao, Changhua, Leconte, Nicolas, Zhou, Shaohua, Wang, Yuan, Watanabe, Kenji, Taniguchi, Takashi, Avila, Jose, Dudin, Pavel, Yu, Pu, Weng, Hongming, Duan, Wenhui, Wu, Quansheng, Jung, Jeil, Zhou, Shuyun
Publikováno v:
Nat Commun 15, 3737 (2024)
Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with
Externí odkaz:
http://arxiv.org/abs/2404.05533
Autor:
Liu, Kai, Zheng, Jian, Sha, Yating, Lyu, Bosai, Li, Fengping, Park, Youngju, Ren, Yulu, Watanabe, Kenji, Taniguchi, Takashi, Jia, Jinfeng, Luo, Weidong, Shi, Zhiwen, Jung, Jeil, Chen, Guorui
Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes pronounced
Externí odkaz:
http://arxiv.org/abs/2306.11042
We show that rhombohedral four-layer graphene (4LG) nearly aligned with a hexagonal boron nitride (hBN) substrate often develops nearly flat isolated low energy bands with non-zero valley Chern numbers. The bandwidths of the isolated flatbands are co
Externí odkaz:
http://arxiv.org/abs/2304.12874
Publikováno v:
Phys. Rev. B 108, L041101 (2023)
We investigate the total energies of spontaneous spin-valley polarized states in bi-, tri-, and tetralayer rhombohedral graphene where the long-range Coulomb correlations are accounted for within the random phase approximation. Our analysis of the ph
Externí odkaz:
http://arxiv.org/abs/2304.07467
We study the commensuration torques and layer sliding energetics of alternating twist trilayer graphene (t3G) and twisted bilayer graphene on hexagonal boron nitride (t2G/BN) that have two superposed moire interfaces. Lattice relaxations for typical
Externí odkaz:
http://arxiv.org/abs/2301.04105
Autor:
Bhowmik, Saisab, Ghawri, Bhaskar, Park, Youngju, Lee, Dongkyu, Datta, Suvronil, Soni, Radhika, Watanabe, K., Taniguchi, T., Ghosh, Arindam, Jung, Jeil, Chandni, U.
New phases of matter can be stabilized by a combination of diverging electronic density of states, strong interactions, and spin-orbit coupling. Recent experiments in magic-angle twisted bilayer graphene (TBG) have uncovered a wealth of novel phases
Externí odkaz:
http://arxiv.org/abs/2211.01251
We calculate the electronic structure of AA'AA'...-stacked alternating twist N-layer (tNG) graphene for N = 3, 4, 5, 6, 8, 10, 20 layers and bulk alternating twist (AT) graphite systems where the lattice relaxations are modeled by means of molecular
Externí odkaz:
http://arxiv.org/abs/2206.09412
Autor:
Gonzalez, David Andres Galeano, Chittari, Bheema Lingam, Park, Youngju, Sun, Jin-Hua, Jung, Jeil
Publikováno v:
Phys. Rev. B 103, 165112 (2021)
Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin pola
Externí odkaz:
http://arxiv.org/abs/2102.05369
Publikováno v:
Phys. Rev. B 103, 075423 (2021)
Spontaneous orbital magnetism observed in twisted bilayer graphene (tBG) on nearly aligned hexagonal boron nitride (BN) substrate builds on top of the electronic structure resulting from combined G/G and G/BN double moire interfaces. Here we show tha
Externí odkaz:
http://arxiv.org/abs/2011.14790