Atomistic Simulation of HF Etching Process of Amorphous Si3N4Using Machine Learning Potential

Autor: Hong, Changho, Oh, Sangmin, An, Hyungmin, Kim, Purun-hanul, Kim, Yaeji, Ko, Jae-hyeon, Sue, Jiwoong, Oh, Dongyean, Park, Sungkye, Han, Seungwu

Publikováno v: ACS Applied Materials & Interfaces; September 2024, Vol. 16 Issue: 36 p48457-48469, 13p

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A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory.

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Atomistic Simulation of HF Etching Process of Amorphous Si 3 N 4 Using Machine Learning Potential.

Autor: Hong C; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Oh S; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., An H; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Kim PH; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea., Kim Y; SK Hynix Inc, Icheon-si, Gyeonggi-do 17336, Republic of Korea., Ko JH; SK Hynix Inc, Icheon-si, Gyeonggi-do 17336, Republic of Korea., Sue J; SK Hynix Inc, Icheon-si, Gyeonggi-do 17336, Republic of Korea., Oh D; SK Hynix Inc, Icheon-si, Gyeonggi-do 17336, Republic of Korea., Park S; SK Hynix Inc, Icheon-si, Gyeonggi-do 17336, Republic of Korea., Han S; Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.; Korea Institute for Advanced Study, Seoul 02455, Republic of Korea.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Sep 11; Vol. 16 (36), pp. 48457-48469. Date of Electronic Publication: 2024 Aug 28.