Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Park, Pil Sung"'
Autor:
Bajaj, Sanyam, Shoron, Omor F., Park, Pil Sung, Krishnamoorthy, Sriram, Akyol, Fatih, Hung, Ting-Hsiang, Reza, Shahed, Chumbes, Eduardo M., Khurgin, Jacob, Rajan, Siddharth
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet char
Externí odkaz:
http://arxiv.org/abs/1508.07050
Autor:
Laskar, Masihhur R., Ma, Lu, K, ShanthaKumar, Park, Pil Sung, Krishnamoorthy, Sriram, Nath, Digbijoy N., Lu, Wu, Wu, Yiying, Rajan, Siddharth
Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films
Externí odkaz:
http://arxiv.org/abs/1302.3177
Autor:
Park, Pil Sung, Reddy, Kongara M., Nath, Digbijoy N., Yang, Zhichao, Padture, Nitin P., Rajan, Siddharth
A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77
Externí odkaz:
http://arxiv.org/abs/1301.1952
Publikováno v:
Appl. Phys. Lett. 102, 113503 (2013)
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of these tunnel
Externí odkaz:
http://arxiv.org/abs/1211.4905
Autor:
Krishnamoorthy, Sriram, Kent, Thomas, Yang, Jing, Park, Pil Sung, Myers, Roberto, Rajan, Siddharth
Publikováno v:
Nano Lett., 13 (6), 2570(2013)
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 {\Omega}-cm2) for various optoelectroni
Externí odkaz:
http://arxiv.org/abs/1206.3810
Publikováno v:
Appl. Phys. Lett. 99, 233504 (2011)
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm2 at 10 mV, and 17.7 A/cm2 peak current) in polariz
Externí odkaz:
http://arxiv.org/abs/1108.4075
Autor:
Krishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth
Publikováno v:
Appl. Phys. Lett. 97, 203502 (2010)
We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel j
Externí odkaz:
http://arxiv.org/abs/1008.4124
Autor:
Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth
Publikováno v:
Journal of Applied Physics; Feb2012, Vol. 111 Issue 4, p043715, 7p, 2 Diagrams, 5 Graphs
Akademický článek
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Autor:
Park, Pil Sung
In this thesis, we have investigated and overcome the major limiting factors of intrinsic and parasitic parameters in III-Nitride high electron mobility transistors for high frequency performance with a combined study of simulations and experimental
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc_num=osu1386015448