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pro vyhledávání: '"Park, Min Hyuk"'
Due to the voltage driven switching at low voltages combined with nonvolatility of the achieved polarization state, ferroelectric materials have a unique potential for low power nonvolatile electronic devices. The competitivity of such devices is hin
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Field-induced ferroelectricity in (doped) hafnia and zirconia has attracted increasing interest in energy-related applications, including energy harvesting and solid-state cooling. It shows a larger isothermal entropy change in a much wider temperatu
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Autor:
Mittmann, Terence, Materano, Monica, Lomenzo, Patrick D., Park, Min Hyuk, Stolichnov, Igor, Cavalieri, Matteo, Zhou, Chuanzhen, Chung, Ching-Chang, Jones, Jacob L., Szyjka, Thomas, Müller, Martina, Kersch, Alfred, Mikolajick, Thomas, Schroeder, Uwe
Thin film metal–insulator–metal capacitors with undoped HfO₂ as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical
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The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techni
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https://tud.qucosa.de/id/qucosa%3A81486
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Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standar
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Autor:
Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Hyun, Seung Dam, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong
Hf₁₋ₓZrₓO₂ (x ∼ 0.5–0.7) has been the leading candidate of ferroelectric materials with a fluorite crystal structure showing highly promising compatibility with complementary metal oxide semiconductor devices. Despite the notable improv
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https://tud.qucosa.de/id/qucosa%3A81336
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Autor:
Grimley, Everett D., Frisone, Sam, Schenk, Tony, Park, Min Hyuk, Mikolajick, Thomas, Fancher, Chris M., Jones, Jacob L., Schroeder, Uwe, LeBeau, James M.
An abstract is not available for this content.
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Autor:
Schroeder, Uwe, Richter, Claudia, Park, Min Hyuk, Schenk, Tony, Pesič, Milan, Hoffmann, Michael, Fengler, Franz P. G., Pohl, Darius, Rellinghaus, Bernd, Zhou, Chuanzhen, Chung, Ching-Chang, Jones, Jacob L., Mikolajick, Thomas
Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimenta
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https://tud.qucosa.de/id/qucosa%3A81038
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Autor:
Park, Min Hyuk, Chung, Ching-Chang, Schenk, Tony, Richter, Clauda, Hoffmann, Michael, Wirth, Steffen, Jones, Jacob L., Mikolajick, Thomas, Schroeder, Uwe
The structural origin of the temperature-dependent ferroelectricity in Si-doped HfO₂ thin films is systematically examined. From temperature-dependent polarization-electric field measurements, it is shown that remanent polarization increases with d
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https://tud.qucosa.de/id/qucosa%3A80498
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Autor:
Park, Min Hyuk, Chung, Ching-Chang, Schenk, Tony, Richter, Claudia, Opsomer, Karl, Detavernier, Christophe, Adelmann, Christoph, Jones, Jacob L., Mikolajick, Thomas, Schroeder, Uwe
The ferroelectricity in fluorite oxides has gained increasing interest due to its promising properties for multiple applications in semiconductor as well as energy devices. The structural origin of the unexpected ferroelectricity is now believed to b
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https://tud.qucosa.de/id/qucosa%3A80499
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