A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE‐CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE

Autor: Park, Changhae, Klein, Kevin M., Tasch, Al F., Simonton, Robert B., Novak, Steve, Lux, Gayle

Publikováno v: COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1991, Vol. 10, Issue 4, pp. 331-340.

Externí odkaz: http://www.emeraldinsight.com/doi/10.1108/eb051710

The Detailed Variation of Boron and Fluorine Profiles with Tilt and Rotation Angles for BF2+ ION Implantation in (100) Silicon.

Autor: Gupta, Puneet, Park, Changhae, Klein, Kevin, Yang, Shyh-horng, Morris, Steve, Do, Vu, Tasch, Al, Simonton, Robert, Lux, Gayle

Publikováno v: MRS Online Proceedings Library; 01/08/1992, Vol. 235, pN.PAG-1, 1p

Boron implant profile variation across a single wafer due to electrostatic scanning

Autor: Park, Changhae, Klein, Kevin M., Tasch, Al F., Simonton, Robert B., Kamenitsa, Dennis E., Novak, Steve

Publikováno v: In Nuclear Inst. and Methods in Physics Research, B 1991 59 Part 1:159-163

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Autor: Park, Changhae, Klein, Kevin M., Tasch, Al F.

Publikováno v: In Solid State Electronics 1990 33(6):645-650

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