Mechanical effects of polishing pad in copper electrochemical mechanical deposition for planarization

Autor: Jeong, Sukhoon, Lee, Sangjik, Park, Boumyoung, Kim, Hyoungjae, Kim, Sungryul, Jeong, Haedo

Publikováno v: In Current Applied Physics 2010 10(1):299-304

Correlation between break-in characteristics and pad surface conditions in silicon wafer polishing

Autor: Park, Kihyun, Park, Jaehong, Park, Boumyoung, Jeong, Haedo

Publikováno v: In Journal of Materials Processing Tech. 2008 205(1):360-365

Influence of slurry components on uniformity in copper chemical mechanical planarization

Autor: Lee, Hyunseop, Park, Boumyoung, Jeong, Haedo

Publikováno v: In Microelectronic Engineering 2008 85(4):689-696

Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing

Autor: Park, Boumyoung, Lee, Hyunseop, Jeong, Haedo, Dornfeld, David

Publikováno v: Park, Boumyoung; Lee, Hyunseop; Jeong, Haedo; & Dornfeld, David. (2009). Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing. Laboratory for Manufacturing and Sustainability. UC Berkeley: Laboratory for Manufacturing and Sustainability. Retrieved from: http://www.escholarship.org/uc/item/40n7p86w

The material removal characteristics of a silicon wafer were experimentally investigated with respect to the chemical dissolution and mechanical abrasion of the wafer during silicon chemical mechanical polishing (CMP) using an alkali-based slurry. Th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::c2294a79f044b718ec2947b2fd4d8b4f
http://www.escholarship.org/uc/item/40n7p86w

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