Výsledky vyhledávání - "Parikshit Sahatiya"

Akademický článek

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

Autor: Gowtham Polumati, Chandra Sekhar Reddy Kolli, Aayush Kumar, Mario Flores Salazar, Andres De Luna Bugallo, Parikshit Sahatiya

Publikováno v: Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)

Abstract This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/M

Externí odkaz: https://doaj.org/article/bd1bcbbd739849e18a61dd0d7537ee45

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Akademický článek

Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance.

Autor: Gowtham Polumati, Chandra Sekhar Reddy Kolli, Andres de Luna Bugallo, Parikshit Sahatiya

Publikováno v: PLoS ONE, Vol 19, Iss 4, p e0297825 (2024)

This study demonstrates the effect of nitrogen doping on the surface state densities (Nss) of monolayer MoS2 and its effect on the responsivity and the response time of the photodetector. Our experimental results shows that by doping monolayer MoS2 b

Externí odkaz: https://doaj.org/article/18ef1b0adf1741fe81b64cb5923deed2

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Akademický článek

Experimental demonstration of SnO₂ nanofiber-based memristors and their data-driven modeling for nanoelectronic applications

Autor: Soumi Saha, Madadi Chetan Kodand Reddy, Tati Sai Nikhil, Kaushik Burugupally, Sanghamitra DebRoy, Akshay Salimath, Venkat Mattela, Surya Shankar Dan, Parikshit Sahatiya

Publikováno v: Chip, Vol 2, Iss 4, Pp 100075- (2023)

This paper demonstrated the fabrication, characterization, data-driven modeling, and practical application of a 1D SnO2 nanofiber-based memristor, in which a 1D SnO2 active layer was sandwiched between silver (Ag) and aluminum (Al) electrodes. This d

Externí odkaz: https://doaj.org/article/cf85e51ab95a4a38815caca28e88513c

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Akademický článek

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

Autor: Sayan Kanungo, Gufran Ahmad, Parikshit Sahatiya, Arnab Mukhopadhyay, Sanatan Chattopadhyay

Publikováno v: npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-29 (2022)

Abstract The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design. However, the detrimental short-channel effects and the fundamen

Externí odkaz: https://doaj.org/article/d09546f7881843e2aed05c148fed91a3

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Akademický článek

Modulation of Schottky Barrier Height by Nitrogen Doping and Its Influence on Responsivity of Monolayer MoS2 Photodetector

Autor: Gowtham Polumati, Chandra Sekhar Reddy Kolli, Venkatarao Selamneni, Mario Flores Salazar, Andres De Luna Bugallo, Parikshit Sahatiya

Publikováno v: Advanced Materials Interfaces, Vol 10, Iss 9, Pp n/a-n/a (2023)

Abstract Monolayer MoS2 flakes are prepared by low‐pressure chemical vapor deposition on p‐type and n‐type silicon substrates and post‐treated under nitrogen (N2)‐rich conditions to incorporate nitrogen atoms in sulfur vacancies. Ultraviole

Externí odkaz: https://doaj.org/article/b76a16a379c54f3e8e5b1565f94cae41

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