Zobrazeno 1 - 10
of 416
pro vyhledávání: '"Parhat, Ahmet"'
Autor:
Nobuyuki Sugii, Takamasa Kawanago, Yoshinori Kataoka, Hiroshi Iwai, Parhat Ahmet, Takeo Hattori, Kuniyuki Kakushima, Kazuo Tsutsui, A. Nishiyama, K. Natori
Publikováno v:
Solid-State Electronics. 84:53-57
This study reports on the electrical characteristics of (1 1 0)-oriented nMOSFETs with a direct contact La-silicate/Si interface structure and the detailed comparison with (1 0 0)-oriented nMOSFETs. Precise control of oxygen partial pressure can prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e42de3ae1a1a727a71b63a1d320b3ac
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100658805
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100658805
Autor:
Nobuyuki Sugii, D.H. Zadeh, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Nohira, Parhat Ahmet, Hiroshi Iwai, Y. Kataoka, Yusei Suzuki, Kazuo Tsutsui, A. Nishiyama, H. Oomine, K. Natori
Publikováno v:
Solid-State Electronics. 82:29-33
Effect of W and TiN/W gate metal on the interface quality of La 2 O 3 /InGaAs metal–oxide-semiconductor (MOS) interface is investigated. Hard X-ray photoelectron spectroscopy revealed that gate metal greatly affects the oxidation states at La 2 O 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66f66c1f3dbf8bcebcfca9795cbb14d8
https://doi.org/10.1016/j.sse.2013.01.013
https://doi.org/10.1016/j.sse.2013.01.013
Autor:
Yuya Suzuki, Parhat Ahmet, Nobuyuki Sugii, Hiroshi Iwai, Kenji Natori, Daryoush Zadeh, Kuniyuki Kakushima, Akira Nishiyama, Takeo Hattori, Yoshinori Kataoka, Kazuo Tsutsui
Publikováno v:
ECS Transactions. 50:145-150
InGaAs surface nitridation effect on La2O3/InGaAs interface has been investigated. It was found that by controlling nitridation conditions such as temperature interface quality can be improved. Also a new covalent structure based on nitridated Si and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba4f2bc21656568e80c3113b0bdf0621
https://doi.org/10.1149/05004.0145ecst
https://doi.org/10.1149/05004.0145ecst
Autor:
Kazuo Tsutsui, Parhat Ahmet, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Satoshi Yamasaki, Kenji Natori, Yuki Tanaka, Kuniyuki Kakushima, Hideo Iwai, Takeo Hattori
Publikováno v:
ECS Transactions. 50:335-340
TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36fde11b5042984bd5f2b3b758b1dc47
https://doi.org/10.1149/05006.0335ecst
https://doi.org/10.1149/05006.0335ecst
Autor:
Parhat Ahmet, Kuniyuki Kakushima, Nobuyuki Sugii, Hiroshi Iwai, Takamasa Kawanago, A. Nishiyama, Takeo Hattori, Yeonghun Lee, K. Natori, Kazuo Tsutsui
Publikováno v:
Solid-State Electronics. 74:2-6
This study focuses on studying the effective electron mobility in direct contact La-silicate/Si structure based nMOSFETs and searching for the difference of the mobility characteristics compared with the SiO 2 MOSFETs. In this study, three types of g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29b2b4804b4514100266177802cdf0cf
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100647654
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100647654
Autor:
Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, M. Mamatrishat, Toru Kubota, Yoshinori Kataoka, T. Seki, Akira Nishiyama, Nobuyuki Sugii
Publikováno v:
Microelectronics Reliability. 52:1039-1042
A novel interpretation for conductance spectra obtained by conductance method of La2O3 gated MOS capacitors has been proposed. Two distinct peaks, one with broad spectrum ranging from 10 k to 200 kHz and the other near 1 kHz with a single time consta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8517c0e7570e2ac5f14ac9363cf03bf
https://doi.org/10.1016/j.microrel.2011.12.025
https://doi.org/10.1016/j.microrel.2011.12.025
Autor:
Kazuo Tsutsui, Parhat Ahmet, Miyuki Kouda, Yoshinori Kataoka, Hiroshi Iwai, A. Nishiyama, Hiroshi Nohira, Kuniyuki Kakushima, M. Mamatrishat, N. Sugii, K. Natori, T. Hattori
Publikováno v:
Vacuum. 86:1513-1516
Interface reactions of a Ce-oxide layer with Si(100) wafers have been characterized by X-ray photoelectron spectroscopy. The ratio of Ce atoms in Ce3+ states within the Ce-oxide layer has been found to decrease from 47% at as-deposited sample to 26%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8ced710cf52fe879dbdc9223b873697
https://doi.org/10.1016/j.vacuum.2012.02.050
https://doi.org/10.1016/j.vacuum.2012.02.050
Autor:
Kazuo Tsutsui, Chunmeng Dou, Nobuyuki Sugii, Takeo Hattori, Parhat Ahmet, Kuniyuki Kakushima, Hiroshi Iwai, Kenji Natori, Akira Nishiyama
Publikováno v:
Microelectronics Reliability. 32(No. 4):688-691
We propose a novel resistive switching device with a W/CeO 2 /Si/TiN structure by incorporating a very thin Si buffer layer in the interface, the memory performance of this device such as forming voltage, operation power, and window and endurance cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::488c1162fb778cf33d1eefb1d2b04a8b
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100647649
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100647649
Autor:
Yoshinori Kataoka, Takeo Hattori, Mokhammad S. Hadi, Akira Nishiyama, Nobuyuki Sugii, Enrique Miranda, Shin-ichi Kano, Kazuo Tsutsui, Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Hiroshi Iwai, Kenji Natori
Publikováno v:
ECS Transactions. 44:439-443
Resistance changing of ion binding insulator hardly obtain large on and off resistance ratio. Resistance switching properties using Ni, W and Ti as a bottom electrode ware caused of changing resistance of Ce oxide. The influence of metal electrode on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9475fa12381c2f14dbfb7bb964a86983
https://doi.org/10.1149/1.3694352
https://doi.org/10.1149/1.3694352
Autor:
Kazuo Tsutsui, Parhat Ahmet, Kuniyuki Kakushima, Nobuyuki Sugii, Ryuji Hosoi, Akira Nishiyama, Darius Zadeh, Yuya Suzuki, Yoshinori Kataoka, Hiroshi Iwai, Kenji Natori, Takeo Hattori
Publikováno v:
ECS Transactions. 44:417-421
The metal/InGaAs Schottky devices with Ni, TiN and stacked Ni/Si were fabricated. J-V and C-V characteristics were measured and Schottky barrier height was calculated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::738821f360101e4c61e8b18a63c35e58
https://doi.org/10.1149/1.3694349
https://doi.org/10.1149/1.3694349