Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Pargam, Vashishtha"'
Autor:
Pargam Vashishtha, Pukhraj Prajapat, Lalit Goswami, Aditya Yadav, Akhilesh Pandey, Govind Gupta
Publikováno v:
Electronic Materials, Vol 3, Iss 4, Pp 357-367 (2022)
Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at va
Externí odkaz:
https://doaj.org/article/aace0bf21e454f568f0f78327e29576e
Publikováno v:
Nano Express, Vol 5, Iss 3, p 035012 (2024)
Sensing of Ultraviolet (UV) Electromagnetic Irradiations (EIs) for wearable dosimetry is promulgated universally by reserving their place in precise calibration for the controlled exposure of UV-EIs for the betterment of humankind. In other words, th
Externí odkaz:
https://doaj.org/article/384860a995b84afe8536983523099c1b
Publikováno v:
Nano Express, Vol 5, Iss 1, p 015005 (2024)
The exponential growth of large data and the widespread adoption of the Internet of Things (IoT) have created significant challenges for traditional Von Neumann computers. These challenges include complex hardware, high energy consumption, and slow m
Externí odkaz:
https://doaj.org/article/092ee016d5b24c0d8830f17dcab1281d
Autor:
Radhe Shyam, Deepak Negi, Komal Shekhawat, Fouran Singh, Devarani Devi, Pargam Vashishtha, Govind Gupta, Subingya Pandey, Pamu Dobbidi, Srinivasa Rao Nelamarri
Publikováno v:
Results in Physics, Vol 47, Iss , Pp 106330- (2023)
The present study demonstrates the tuning of structural, topography, and luminescence properties of 30 keV Li-ion implanted (K,Na)NbO3 thin films synthesized using RF sputtering. The Li-ion implantation of KNN films was carried out at different ion f
Externí odkaz:
https://doaj.org/article/fcaa7aebd5fd4496a29ae7cf39ce44e6
Autor:
Lalit Goswami, Neha Aggarwal, Pargam Vashishtha, Shubhendra Kumar Jain, Shruti Nirantar, Jahangeer Ahmed, M. A. Majeed Khan, Rajeshwari Pandey, Govind Gupta
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibi
Externí odkaz:
https://doaj.org/article/5e2716015d3146e496d95b8298306188
Autor:
Lalit Goswami, Neha Aggarwal, Shibin Krishna, Manjri Singh, Pargam Vashishtha, Surinder Pal Singh, Sudhir Husale, Rajeshwari Pandey, Govind Gupta
Publikováno v:
ACS Omega, Vol 5, Iss 24, Pp 14535-14542 (2020)
Externí odkaz:
https://doaj.org/article/0a1ee931730a4e0888bbbe9c8fea6693
Publikováno v:
Luminescence. 38:568-575
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74256e57190fceb530580e34001377b4
https://doi.org/10.1002/bio.4484
https://doi.org/10.1002/bio.4484
Publikováno v:
ACS Applied Electronic Materials. 5:1891-1902
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c22b4e28da6ba897079510ec6957898
https://doi.org/10.1021/acsaelm.3c00156
https://doi.org/10.1021/acsaelm.3c00156
Publikováno v:
ACS Applied Electronic Materials. 4:5641-5651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa22fbadee9d9b20f35ccd3afcfc82f
https://doi.org/10.1021/acsaelm.2c01362
https://doi.org/10.1021/acsaelm.2c01362
Autor:
Deepak Negi, Radhe Shyam, Komal Shekhawat, Pargam Vashishtha, Govind Gupta, Mukul Gupta, Srinivasa Rao Nelamarri
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2129064753e1afaccea0bba15b0b5a62
https://doi.org/10.1007/s10854-023-10553-0
https://doi.org/10.1007/s10854-023-10553-0