Zobrazeno 1 - 10
of 904
pro vyhledávání: '"Parate AS"'
Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re represents rare earth metals like Pr, Nd, Sm, Eu...), form a family of PCMs
Externí odkaz:
http://arxiv.org/abs/2410.22868
Autor:
Jangra, Divya, De, Binoy Krishna, Sharma, Pragati, Chakraborty, Koushik, Parate, Shubham, Yogi, Arvind Kumar, Mittal, Ranjan, Gupta, Mayanak K, Nukala, Pavan, Velpula, Praveen Kumar, Sathe, Vasant G.
The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, such as photodetectors and photo-actuators. In this study, we investiga
Externí odkaz:
http://arxiv.org/abs/2409.17570
Autor:
Haque, Asraful, Mandal, Suman Kumar, Parate, Shubham Kumar, Dsouza, Harshal Jason, Chandola, Sakshi, Nukala, Pavan, Raghavan, Srinivasan
Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene
Externí odkaz:
http://arxiv.org/abs/2408.07920
Autor:
De, Binoy Krishna, Sathe, V. G., Divya, Sharma, Pragati, Parate, Shubham Kumar, Kunwar, Hemant Singh, Nukala, Pavan, Roy, S. B.
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by mini
Externí odkaz:
http://arxiv.org/abs/2407.12507
Autor:
Haque, Asraful, D'Souza, Harshal Jason, Parate, Shubham Kumar, Sandilya, Rama Satya, Raghavan, Srinivasan, Nukala, Pavan
Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal subst
Externí odkaz:
http://arxiv.org/abs/2407.11338
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates
Externí odkaz:
http://arxiv.org/abs/2403.18475
Autor:
Akhina Palollathil, Revathy Nandakumar, Mukhtar Ahmed, Anoop Kumar G. Velikkakath, Mahammad Nisar, Muhammad Nisar, Rex Devasahayam Arokia Balaya, Sakshi Sanjay Parate, Vidyarashmi Hanehalli, Althaf Mahin, Rohan Thomas Mathew, Rohan Shetty, Jalaluddin Akbar Kandel Codi, Amjesh Revikumar, Manavalan Vijayakumar, Thottethodi Subrahmanya Keshava Prasad, Rajesh Raju
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-15 (2024)
Abstract Drug resistance poses a significant obstacle to the success of anti-cancer therapy in head and neck cancers (HNCs). We aim to develop a platform for visualizing and analyzing molecular expression alterations associated with HNC drug resistan
Externí odkaz:
https://doaj.org/article/bacc377953114922a8c923912b3efcf7
Publikováno v:
Discover Civil Engineering, Vol 1, Iss 1, Pp 1-17 (2024)
Abstract Urbanization has led to extensive pavement construction, which, coupled with improper drainage infrastructure, exacerbates urban flooding. Conventional bituminous pavements exacerbate flood risks due to their impermeability, leading to safet
Externí odkaz:
https://doaj.org/article/329f4710d0c44049a48a5e4b65b73a7a
Autor:
Apeksha Pandey, Manepalli Sai Teja, Parul Sahare, Vipin Kamble, Mayur Parate, Mohammad Farukh Hashmi
Publikováno v:
Journal of Electrical Systems and Information Technology, Vol 11, Iss 1, Pp 1-23 (2024)
Abstract Skin conditions are becoming increasingly prevalent across the world in current times. With the rise in dermatological disorders, there is a need for computerized techniques that are completely noninvasive to patients’ skin. As a result, d
Externí odkaz:
https://doaj.org/article/d050d11f0bd4424190ac072f4fc16601
Autor:
Vura, Sandeep, Parate, Shubham Kumar, Pal, Subhajit, Khandelwal, Upanya, Rai, Rajeev Kumar, Molleti, Sri Harsha, Kumar, Vishnu, Ventrapragada, Rama Satya Sandilya, Patil, Girish, Jain, Mudit, Mallya, Ambresh, Ahmadi, Majid, Kooi, Bart, Avasthi, Sushobhan, Ranjan, Rajeev, Raghavan, Srinivasan, Chandorkar, Saurabh, Nukala, Pavan
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrost
Externí odkaz:
http://arxiv.org/abs/2303.03286