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pro vyhledávání: '"Parate, Shubham Kumar"'
Autor:
Haque, Asraful, Mandal, Suman Kumar, Parate, Shubham Kumar, Dsouza, Harshal Jason, Chandola, Sakshi, Nukala, Pavan, Raghavan, Srinivasan
Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene
Externí odkaz:
http://arxiv.org/abs/2408.07920
Autor:
De, Binoy Krishna, Sathe, V. G., Divya, Sharma, Pragati, Parate, Shubham Kumar, Kunwar, Hemant Singh, Nukala, Pavan, Roy, S. B.
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by mini
Externí odkaz:
http://arxiv.org/abs/2407.12507
Autor:
Haque, Asraful, D'Souza, Harshal Jason, Parate, Shubham Kumar, Sandilya, Rama Satya, Raghavan, Srinivasan, Nukala, Pavan
Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal subst
Externí odkaz:
http://arxiv.org/abs/2407.11338
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates
Externí odkaz:
http://arxiv.org/abs/2403.18475
Autor:
Vura, Sandeep, Parate, Shubham Kumar, Pal, Subhajit, Khandelwal, Upanya, Rai, Rajeev Kumar, Molleti, Sri Harsha, Kumar, Vishnu, Ventrapragada, Rama Satya Sandilya, Patil, Girish, Jain, Mudit, Mallya, Ambresh, Ahmadi, Majid, Kooi, Bart, Avasthi, Sushobhan, Ranjan, Rajeev, Raghavan, Srinivasan, Chandorkar, Saurabh, Nukala, Pavan
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrost
Externí odkaz:
http://arxiv.org/abs/2303.03286
Autor:
V., Rama Satya Sandilya, Singh, Arvind Rajnarayan, Vura, Sandeep, Parate, Shubham Kumar, Venugopalarao, Anirudh, Raghavan, Srinivasan, Nukala, Pavan, Avasthi, Sushobhan
Publikováno v:
In Materialia May 2024 34
Akademický článek
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Akademický článek
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Akademický článek
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Autor:
Parate SK; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India. shubhamkp@iisc.ac.in., Vura S; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India. sandeepv@iisc.ac.in., Pal S; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India.; School of Engineering and Materials Science, Queen Mary University of London, London, E1 4NS, United Kingdom., Khandelwal U; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Sandilya Ventrapragada RS; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Rai RK; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India.; Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, PA, 19104, USA., Molleti SH; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Kumar V; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Patil G; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Jain M; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Mallya A; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Ahmadi M; Zernike Institute for Advanced Materials, University of Groningen, Groningen, 9747AG, The Netherlands., Kooi B; Zernike Institute for Advanced Materials, University of Groningen, Groningen, 9747AG, The Netherlands.; CogniGron center, University of Groningen, Groningen, 9747 AG, The Netherlands., Avasthi S; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Ranjan R; Materials Engineering, Indian Institute of Science, Bengaluru, 560012, India., Raghavan S; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Chandorkar S; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Nukala P; Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India. pnukala@iisc.ac.in.
Publikováno v:
Nature communications [Nat Commun] 2024 Feb 16; Vol. 15 (1), pp. 1428. Date of Electronic Publication: 2024 Feb 16.