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pro vyhledávání: '"Parate, Shubham"'
Autor:
Jangra, Divya, De, Binoy Krishna, Sharma, Pragati, Chakraborty, Koushik, Parate, Shubham, Yogi, Arvind Kumar, Mittal, Ranjan, Gupta, Mayanak K, Nukala, Pavan, Velpula, Praveen Kumar, Sathe, Vasant G.
The anisotropic light-matter interactions in 2D materials have garnered significant attention for their potential to develop futuristic polarization-based optoelectronic devices, such as photodetectors and photo-actuators. In this study, we investiga
Externí odkaz:
http://arxiv.org/abs/2409.17570
Autor:
Haque, Asraful, Mandal, Suman Kumar, Parate, Shubham Kumar, Dsouza, Harshal Jason, Chandola, Sakshi, Nukala, Pavan, Raghavan, Srinivasan
Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers like graphene
Externí odkaz:
http://arxiv.org/abs/2408.07920
Autor:
De, Binoy Krishna, Sathe, V. G., Divya, Sharma, Pragati, Parate, Shubham Kumar, Kunwar, Hemant Singh, Nukala, Pavan, Roy, S. B.
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive switching by mini
Externí odkaz:
http://arxiv.org/abs/2407.12507
Autor:
Haque, Asraful, D'Souza, Harshal Jason, Parate, Shubham Kumar, Sandilya, Rama Satya, Raghavan, Srinivasan, Nukala, Pavan
Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on ideal subst
Externí odkaz:
http://arxiv.org/abs/2407.11338
On-chip refrigeration at cryogenic temperatures is becoming an important requirement in the context of quantum technologies and nanoelectronics. Ferroic materials with enhanced electrocaloric effects at phase transitions are good material candidates
Externí odkaz:
http://arxiv.org/abs/2403.18475
Autor:
Vura, Sandeep, Parate, Shubham Kumar, Pal, Subhajit, Khandelwal, Upanya, Rai, Rajeev Kumar, Molleti, Sri Harsha, Kumar, Vishnu, Ventrapragada, Rama Satya Sandilya, Patil, Girish, Jain, Mudit, Mallya, Ambresh, Ahmadi, Majid, Kooi, Bart, Avasthi, Sushobhan, Ranjan, Rajeev, Raghavan, Srinivasan, Chandorkar, Saurabh, Nukala, Pavan
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrost
Externí odkaz:
http://arxiv.org/abs/2303.03286
Autor:
V., Rama Satya Sandilya, Singh, Arvind Rajnarayan, Vura, Sandeep, Parate, Shubham Kumar, Venugopalarao, Anirudh, Raghavan, Srinivasan, Nukala, Pavan, Avasthi, Sushobhan
Publikováno v:
In Materialia May 2024 34
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