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pro vyhledávání: '"Parasitic bipolar transistor"'
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Akademický článek
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Autor:
Naruhisa Miura, Shingo Tomohisa, Shiro Hino, Yuichi Nagahisa, Koutarou Kawahara, Hatta Hideyuki
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
To suppress bipolar current from the peripheral p-type well region (p-well) of an SBD-embedded SiC-MOSFET, a novel termination structure named capacitively coupled termination (CCT) is demonstrated. CCT, where only a large n-type region formed within
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4888bbac632c39656d8e792aa24291
https://doi.org/10.1109/ispsd46842.2020.9170088
https://doi.org/10.1109/ispsd46842.2020.9170088
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 739-746 (2018)
An SOI LDMOS device with improved ruggedness under unclamped inductive switching (UIS) is described based on the substrate-dissipating (SD) mechanism. The key feature of this device is the introduction of a Γ-shape P-island window with a relatively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6095637e35b23a060813362b17534ec6
https://doi.org/10.1109/jeds.2018.2831278
https://doi.org/10.1109/jeds.2018.2831278
Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles
Autor:
A.V. Sogoyan, Alexander I. Chumakov
Publikováno v:
Russian Microelectronics. 46:282-289
An analytical model to evaluate the ionization response of a group of closely located p-n junctions under exposure to a separate heavy charged particle (HCP) in a diffusive approximation is proposed. It is revealed that, taking into account, the inho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb2d197692e268bc4f0dc20ef5fcb182
https://doi.org/10.1134/s1063739717040084
https://doi.org/10.1134/s1063739717040084
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In this paper, an optimized trench power MOSFET is presented with three-dimensional (3D) TCAD simulation. A superior device’s performance can be achieved by using the partially widened split gate and the trench source. Simulation results indicate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1bd3dd5a34c2ba6f4d87deee27e73c2
https://doi.org/10.1109/edssc.2019.8754461
https://doi.org/10.1109/edssc.2019.8754461
Autor:
Junyeap Kim, Seong Kwang Kim, Jaewon Park, Dae Hwan Kim, Heesung Lee, Dong Myong Kim, Jaewon Kim, Sung-Jin Choi
Publikováno v:
IEEE Transactions on Electron Devices. 63:4196-4200
Separate extraction of source ( $R_{\mathrm{ S}})$ from drain resistance ( $R_{\mathrm{ D}})$ is important in the systematic modeling of electrical characteristics and investigation of physical mechanism related to the performance and reliability in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b09ec21845659651ace3829e2fa7b426
https://doi.org/10.1109/ted.2016.2607721
https://doi.org/10.1109/ted.2016.2607721
Autor:
Teruo Suzuki
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Electro-Static Discharge (ESD) protection circuit by parasitic lateral NPN bipolar transistors (LNPN) is used especially for NMOS Open Drain structure for signal Input/Output (IO) cell like Inter-Integrated Circuit (I2C) or Fail Safe IO. In power cla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40dca550cec419db2cbd05bb9fd06639
https://doi.org/10.1109/icsict.2018.8565810
https://doi.org/10.1109/icsict.2018.8565810
Autor:
Jin Young Choi
Publikováno v:
Circuits and Systems. :2286-2295
In this work, we show that an excessive lattice heating problem can occur in the diode electrostatic discharge (ESD) protection device connected to a VDD bus in the popular diode input protection scheme, which is favorably used in CMOS RF ICs. To fig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b840dc46bef429551a4dde0dbd38ebc6
https://doi.org/10.4236/cs.2016.79199
https://doi.org/10.4236/cs.2016.79199