Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Paramètres S"'
Autor:
Fiorese, Victor
Publikováno v:
Micro et nanotechnologies/Microélectronique. Université de Lille, 2022. Français. ⟨NNT : 2022ULILN016⟩
Cutting-edge Silicon technologies targeting Ft/Fmax above 400 GHz allow circuit design in the 130-260 GHz frequency range. To enhance development of bipolar transistors in such technologies, figure of merit extraction such as noise figure, power effi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4254::647bb237ee3a86d0f199630b1b9c3f3f
https://theses.hal.science/tel-03958625/document
https://theses.hal.science/tel-03958625/document
Autor:
Bouslama, Mohamed
Publikováno v:
Electronique. Université de Limoges, 2020. Français. ⟨NNT : 2020LIMO0076⟩
GaN-based HEMTs have already demonstrated their supreme potential for all high power and high frequency applications. However, this technology suffers from limitations due to complex trapping/de-trapping mechanisms that occurs in the device and that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::14f2a4fc9921a61377a416ade113aacd
https://tel.archives-ouvertes.fr/tel-03149025
https://tel.archives-ouvertes.fr/tel-03149025
Autor:
Tunio, Irfan Ali
Publikováno v:
Electronics. UNIVERSITE DE NANTES, 2020. English. ⟨NNT : ⟩
Electronics. UNIVERSITE DE NANTES, 2020. English
Electronics. UNIVERSITE DE NANTES, 2020. English
Impedance mismatching in antenna arrays is an important issue especially when a huge number of antenna elements are placedside by side. This mismatch is generally blamed to exist because of mutual coupling between antenna elements. The phenomenon of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3a0eb57439f4963533ebea734dc54398
https://hal.science/tel-03096564
https://hal.science/tel-03096564
Autor:
Ghanem, Haitham
Publikováno v:
Micro and nanotechnologies/Microelectronics. Université de Lille, 2020. English. ⟨NNT : 2020LILUI060⟩
Device technology is rapidly improving, making it possible to fabricate electronic components with high cut-off frequencies where entirely new applications in the millimetre-wave and Terahertz band become feasible . This rapid development raise a set
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4254::f3a9bdee0ee6a4af8bf91d856a91bac6
https://theses.hal.science/tel-03611227/file/These_GHANEM_Haitham.pdf
https://theses.hal.science/tel-03611227/file/These_GHANEM_Haitham.pdf
Autor:
Bouchour, Al Mehdi
Publikováno v:
Electronics. Normandie Université; Université Abdelmalek Essaâdi (Tétouan, Maroc), 2020. English. ⟨NNT : 2020NORMR045⟩
In this thesis, we have studied the impact of aging the GaN HEMT on the power converter efficiency. For that, we have developed an experimental methodology to estimate the power losses of the GaN HEMT for switching circuit applications. The estimatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::991eb5c39f7ad500d11dfc553d07173b
https://tel.archives-ouvertes.fr/tel-03137632/file/almehdibouchour.pdf
https://tel.archives-ouvertes.fr/tel-03137632/file/almehdibouchour.pdf
Autor:
Cholachue Ngounou, Christel
Publikováno v:
Electronique. Normandie Université, 2020. Français. ⟨NNT : 2020NORMR025⟩
During the last decade, the proliferation of on-board leisure activities in the new aircrafts have been growing exponentially. In the airplane like A380, each seat integrates several functions (video games, music, etc. ..) Additionally, each function
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::5cee0527818c69a35b34485cad88cf12
https://tel.archives-ouvertes.fr/tel-03034434
https://tel.archives-ouvertes.fr/tel-03034434
Autor:
Bouslama, Mohamed
Publikováno v:
Electronique. Université de Limoges, 2020. Français. ⟨NNT : 2020LIMO0076⟩
GaN-based HEMTs have already demonstrated their supreme potential for all high power and high frequency applications. However, this technology suffers from limitations due to complex trapping/de-trapping mechanisms that occurs in the device and that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::14f2a4fc9921a61377a416ade113aacd
https://theses.hal.science/tel-03149025
https://theses.hal.science/tel-03149025
Autor:
Cholachue Ngounou, Christel
Publikováno v:
Electronique. Normandie Université, 2020. Français. ⟨NNT : 2020NORMR025⟩
During the last decade, the proliferation of on-board leisure activities in the new aircrafts have been growing exponentially. In the airplane like A380, each seat integrates several functions (video games, music, etc. ..) Additionally, each function
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5cee0527818c69a35b34485cad88cf12
https://theses.hal.science/tel-03034434
https://theses.hal.science/tel-03034434
Autor:
Samnouni, Mohammed
Publikováno v:
Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI103⟩
Progress of III-V technologies are now making it possible to design electronic components operating in the millimeter and sub-millimeter wave range (THz) are facing the needs of the telecommunications and electronics market for various industrial sec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4254::94149e02ba0868f221f9a9c7236944c4
https://theses.hal.science/tel-03611230
https://theses.hal.science/tel-03611230
Autor:
Pace, Loris
Publikováno v:
Micro et nanotechnologies/Microélectronique. Université de Lille, 2019. Français. ⟨NNT : 2019LILUI078⟩
The high frequency operation of GaN power transistors is of great interest in order to reduce size, weight and volume of power converters. Indeed, GaN HEMT power transistors show very good physical properties for the development of high frequency pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4254::c94602f65cefddf2b133e423497b163e
https://theses.hal.science/tel-03624112
https://theses.hal.science/tel-03624112