Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Paradisanos, I"'
Autor:
Akhavan, S., Najafabadi, A. Taheri, Mignuzzi, S., Jalebi, M. Abdi, Ruocco, A., Paradisanos, I., Balci, O., Andaji-Garmaroudi, Z., Goykhman, I., Occhipinti, L. G., Lidorikis, E., Stranks, S. D., Ferrari, A. C.
The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adapta
Externí odkaz:
http://arxiv.org/abs/2311.11450
Autor:
Kourmoulakis, G., Michail, A., Paradisanos, I., Marie, X., Glazov, M. M., Jorissen, B., Covaci, L., Stratakis, E., Papagelis, K., Parthenios, J., Kioseoglou, G.
We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of -130 meV per % of strain is observed in the neutral exciton emission
Externí odkaz:
http://arxiv.org/abs/2307.12663
Autor:
Aristegui, R., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Paradisanos, I., Robert, C., Marie, X., Urbaszek, B., Chenot, S., Cordier, Y., Damilano, B.
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by deposit
Externí odkaz:
http://arxiv.org/abs/2306.04404
Autor:
Katsipoulaki, E., Vailakis, G., Demeridou, I., Karfaridis, D., Patsalas, P., Watanabe, K., Taniguchi, T., Paradisanos, I., Kopidakis, G., Kioseoglou, G., Stratakis, E.
Publikováno v:
2D Materials, 10, 045008 (2023)
Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and
Externí odkaz:
http://arxiv.org/abs/2305.06756
Autor:
Cadore, A. R., Rosa, B. L. T., Paradisanos, I., Mignuzzi, S., De Fazio, D., Alexeev, E. M., Muench, J. E., Kakavelakis, G., Shinde, S. M., Yoon, D., Tongay, S., Watanabe, K., Taniguchi, T., Lidorikis, E., Goykhman, I., Soavi, G., Ferrari, A. C.
Publikováno v:
Phys. Rev B 108, 035420 (2023)
Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across
Externí odkaz:
http://arxiv.org/abs/2305.01791
Autor:
Orekhov, A., Jannis, D., Gauquelin, N., Guzzinati, G., Mehta, A. Nalin, Psilodimitrakopoulos, S., Mouchliadis, L., Sahoo, P. K., Paradisanos, I., Ferrari, A. C., Kioseoglou, G., Stratakis, E., Verbeeck, J.
Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropi
Externí odkaz:
http://arxiv.org/abs/2011.01875
Akademický článek
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Autor:
Paradisanos, I., Germanis, S., Pelekanos, N. T., Fotakis, C., Kymakis, E., Kioseoglou, G., Stratakis, E.
Publikováno v:
Applied Physics Letters 110, 193102 (2017)
Single layers of WS2 are direct gap semiconductors with high photoluminescence (PL) yield holding great promise for emerging applications in optoelectronics. The spatial confinement in a 2D monolayer together with the weak dielectric screening lead t
Externí odkaz:
http://arxiv.org/abs/1705.02943
Akademický článek
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Autor:
Paradisanos, I., Pliatsikas, N., Patsalas, P., Fotakis, C., Kymakis, E., Kioseoglou, G., Stratakis, E.
Publikováno v:
Nanoscale, 2016
Monolayers of Transition Metal Dichalcogenides (TMDs) are atomically thin two-dimensional crystals with attractive optoelectronic properties, which are promising for emerging applications in nanophotonics. Here, we report on the extraordinary spatial
Externí odkaz:
http://arxiv.org/abs/1603.07923