Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Papu D. Maniar"'
Autor:
Albert Lamm, Philip James Ong, Clarence J. Tracy, Igor J. Malik, Anthony Paler, Eric S. Johnson, Peter Fejes, Papu D. Maniar, N. David Theodore
Publikováno v:
Journal of Electronic Materials. 33:886-892
Single-crystal Ge-on-insulator (GOI) substrates, made by bonding a hydrogen-implanted Ge substrate to a thermally oxidized, silicon handle wafer, are studied for properties relevant to device fabrication. The stages of the layer transfer process are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b4951c23468b7b5c2654b0475801277
https://doi.org/10.1007/s11664-004-0216-5
https://doi.org/10.1007/s11664-004-0216-5
Autor:
Shawn G. Thomas, Papu D. Maniar, Q.J. Hartmann, Xiuling Li, D.A. Ahmari, Eric S. Johnson, B. Roof, Clarence J. Tracy
Publikováno v:
IEEE Electron Device Letters. 26:438-440
In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c02bf81e6db6fff782f8e2a22d9cc602
https://doi.org/10.1109/led.2005.851132
https://doi.org/10.1109/led.2005.851132
Autor:
Peter Zurcher, J. Z. Witowski, S.J. Gillespie, Robert E. Jones, Y. T. Lii, Papu D. Maniar, R. Moazzami, P.Y. Chu
Publikováno v:
Thin Solid Films. 270:584-588
Non-volatile ferroelectric random access memories (FERAM) offer substantial advantages over conventional floating-gate electrically erasable programmable read only memory (EEPROM) and flash EEPROM devices. FERAMS can be written at high speeds (≈100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::338e3036af5d2622917f06776d3c4309
https://doi.org/10.1016/0040-6090(95)06754-x
https://doi.org/10.1016/0040-6090(95)06754-x
Autor:
D. J. Taylor, Papu D. Maniar, Peter Zurcher, Bo Jiang, P.Y. Chu, S.J. Gillespie, Y. T. Lii, Robert E. Jones
Publikováno v:
Microelectronic Engineering. 29:3-10
Several metal oxide perovskites and Bi layered perovskites are of substantial interest for integrated circuit memories. Strontium titanate, barium strontium titanate, and lead zirconate titanate based paraelectrics are of particular interest for dyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f1a3b9d1c9fee6d6509452ba7de5eaa
https://doi.org/10.1016/0167-9317(95)00106-9
https://doi.org/10.1016/0167-9317(95)00106-9
Autor:
Robert E. Jones, J. R. Williams, R. Moazzami, A. C. Campbell, M. Kottke, Papu D. Maniar, Rich Gregory, J. L. Dupuie, M. L. Bozack, J. M. Ferrero
Publikováno v:
Integrated Ferroelectrics. 6:81-92
Investigations of materials interactions that complicate the integration of PZT ferroelectric capacitors into CMOS technologies are discussed. These include interactions within the Pt/Ti electrodes structure, the reactions of sol-gel deposited PZT du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fbf695056758641d3fccbcda043a5f4
https://doi.org/10.1080/10584589508019355
https://doi.org/10.1080/10584589508019355
Publikováno v:
Integrated Ferroelectrics. 5:235-244
Suppression of the nonvolatile polarization in lead zirconate titanate films by La doping or by use of films 100 nm or less in thickness provides the highest charge storage densities yet observed. These films also satisfy leakage current density and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e19937a03998d48788d44a0ba759323
https://doi.org/10.1080/10584589408017017
https://doi.org/10.1080/10584589408017017
Autor:
A. C. Campbell, Papu D. Maniar, C. J. Mogab, R. Moazzami, Jack C. Lee, Robert E. Jones, C. Sudhama
Publikováno v:
Journal of Applied Physics. 75:1014-1022
Time‐zero current‐voltage characteristics and time‐dependent current behavior of metal‐ferroelectric‐metal (Pt‐PZT‐Pt) capacitor structures have been studied. Under constant‐voltage stressing, the current density through the 1500‐A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b8c0b1e56648c6688d3c8b277052aac
https://doi.org/10.1063/1.356508
https://doi.org/10.1063/1.356508
Publikováno v:
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review.
This study investigates the scaling potential of sol gelderived ferroelectric lead zirconate titanate (PZT) thin films for future nonvolatile memories. Ferroelectric hysteresis loops are exploited to demonstrate nonvolatile memory operation at intern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02168381b5befecddd134a2050259074
https://doi.org/10.1109/nvmt.1993.696948
https://doi.org/10.1109/nvmt.1993.696948
Publikováno v:
Proceedings of 1994 VLSI Technology Symposium.
Ferroelectric technology has several desirable features for low-power nonvolatile memories including low operating voltages (read and write as low as 1.5 V), high-speed write operation (intrinsic switching times 10/sup 13/ read/write cycles), and sma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe5b00203605a163564be76a419120ca
https://doi.org/10.1109/vlsit.1994.324380
https://doi.org/10.1109/vlsit.1994.324380
Publikováno v:
Applied Physics Letters. 60:1022-1024
Paraelectric lead lanthanum zirconium titanate (PLZT) films, 150 nm thick, were deposited using a spin‐coat, sol‐gel process followed by a 650 °C oxygen anneal. X‐ray diffraction indicated complete conversion to the perovskite phase. Sputter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7eda8a0f2dbbb7f96bddd4516cb632d
https://doi.org/10.1063/1.106486
https://doi.org/10.1063/1.106486