Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Pappert, K."'
Autor:
Naydenova, Ts., Dürrenfeld, P., Tavakoli, K., Pegard, N., Ebel, L., Pappert, K., Brunner, K., Gould, C., Molenkamp, L. W.
We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the
Externí odkaz:
http://arxiv.org/abs/1110.6339
We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out
Externí odkaz:
http://arxiv.org/abs/1012.4252
We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magne
Externí odkaz:
http://arxiv.org/abs/0812.0455
Publikováno v:
New J. Phys. 9 (2007) 354
This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy fingerprint techn
Externí odkaz:
http://arxiv.org/abs/0802.4400
Autor:
Gould, C., Mark, S., Pappert, K., Dengel, G., Wenisch, J., Campion, R. P., Rushforth, A. W., Chiba, D., Li, Z., Liu, X., Van Roy, W., Ohno, H., Furdyna, J. K., Gallagher, B., Brunner, K., Schmidt, G., Molenkamp, L. W.
This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy ter
Externí odkaz:
http://arxiv.org/abs/0802.4206
Publikováno v:
PHYSICAL REVIEW B Volume: 76 Issue: 12 Article Number: 125206 Published: 2007
A numerical technique is developed to solve the Luttinger-Kohn equation for impurity states directly in k-space and is applied to calculate bound hole wave functions in a ferromagnetic (Ga,Mn)As host. The rich properties of the band structure of an a
Externí odkaz:
http://arxiv.org/abs/0704.2028
Autor:
Wenisch, J., Gould, C., Ebel, L., Storz, J., Pappert, K., Schmidt, M. J., Kumpf, C., Schmidt, G., Brunner, K., Molenkamp, L. W.
Publikováno v:
Phys. Rev. Lett. 99, 077201 (2007)
We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophisticated X-ray techniques. The magnetic anisotropy before patterning of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0701479
Autor:
Pappert, K., Hümpfner, S., Gould, C., Wenisch, J., Brunner, K., Schmidt, G., Molenkamp, L. W.
Publikováno v:
Nature Physics Volume: 3 Issue: 8 Pages: 573-578 (2007)
Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we
Externí odkaz:
http://arxiv.org/abs/cond-mat/0701478
Autor:
Hümpfner, S., Sawicki, M., Pappert, K., Wenisch, J., Brunner, K., Gould, C., Schmidt, G., Dietl, T., Molenkamp, L. W.
Publikováno v:
Appl. Phys. Lett. 90, 102102 (2007)
The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally
Externí odkaz:
http://arxiv.org/abs/cond-mat/0612439
Autor:
Pappert, K., Hümpfner, S., Wenisch, J., Brunner, K., Gould, C., Schmidt, G., Molenkamp, L. W.
Publikováno v:
Appl. Phys. Lett 90, 062109 (2007)
The rich magnetic anisotropy of compressively strained (Ga,Mn)As has attracted great interest recently. Here we discuss a sensitive method to visualize and quantify the individual components of the magnetic anisotropy using transport. A set of high r
Externí odkaz:
http://arxiv.org/abs/cond-mat/0611156