Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Paolo Paletti"'
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 1, Pp 19-25 (2018)
A platform for benchmarking tunnel field-effect transistors (TFETs) for analog applications is presented and used to compare selected TFETs to FinFET technology at the 14-nm node. This benchmarking is enabled by the development of a universal TFET SP
Externí odkaz:
https://doaj.org/article/c4db48ca5f3041ca889c95ce4943f946
Autor:
Paolo Paletti, Alan Seabaugh
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bb2a3747049ba405ce1b00aef09f4f5
https://doi.org/10.1007/978-3-030-79827-7_24
https://doi.org/10.1007/978-3-030-79827-7_24
Autor:
Alan Seabaugh, Paolo Paletti, Bhakti Jariwala, M. Asghari Heidarlou, Joshua A. Robinson, Susan K. Fullerton-Shirey
Publikováno v:
IEEE Transactions on Electron Devices. 67:1839-1844
Stepper-based batch fabrication of top-gated field-effect transistors (FETs) is demonstrated on few-layer WSe2-on-sapphire grown by chemical vapor deposition. This article reports the electrical characterization of 94 transistors with three different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dbd8fe3dae928cc2ff96b358ce4a875
https://doi.org/10.1109/ted.2020.2974450
https://doi.org/10.1109/ted.2020.2974450
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-7 (2019)
Two-dimensional van der Waals materials offer unique advantages for the development of band-to-band tunneling devices given their lack of dangling bonds, atomically flat thickness and steep band edges. Here, we present the experimental demonstration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fb8f636494b13c6481dbadacb2f5218
http://link.springer.com/article/10.1038/s41699-019-0101-y
http://link.springer.com/article/10.1038/s41699-019-0101-y
Autor:
Maomao, Liu, Sichen, Wei, Simran, Shahi, Hemendra Nath, Jaiswal, Paolo, Paletti, Sara, Fathipour, Maja, Remškar, Jun, Jiao, Wansik, Hwang, Fei, Yao, Huamin, Li
Publikováno v:
Nanoscale. 12(33)
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5a6ac880342d4f11049b2969f817f8bd
https://pubmed.ncbi.nlm.nih.gov/32329484
https://pubmed.ncbi.nlm.nih.gov/32329484
Autor:
Paolo Paletti, Wan Sik Hwang, Maja Remškar, Hemendra Nath Jaiswal, Maomao Liu, Sichen Wei, Jun Jiao, Sara Fathipour, Hua-Min Li, Simran Shahi, Fei Yao
High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ea316d4dccc36c74d38adbab363b9ce
http://arxiv.org/abs/2001.05105
http://arxiv.org/abs/2001.05105
Publikováno v:
ASICON
Ferroelectric (FE) and solid polymer electrolytes (SPEs) are being explored for memory and for a variety of purposes in transistors. While considering the dynamics of emerging memories, we note some interesting implications for transistors and transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5210ed6538ede779a8889b55866c4bb
https://doi.org/10.1109/asicon47005.2019.8983607
https://doi.org/10.1109/asicon47005.2019.8983607
Autor:
Cristobal Alessandri, K. Gonzalez Serrano, M. Asghari Heidarlou, Paolo Paletti, Alan Seabaugh
Publikováno v:
DRC
Complex gate dielectrics are being widely explored to provide voltage amplification leading to steep subthreshold swing (SS) in transistors [1]. Here we show that hysteretic steep SS can arise simply from the introduction of a series resistance in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bfc0ed5c99836a1b17ba1b9bf2c4a03
https://doi.org/10.1109/drc46940.2019.9046434
https://doi.org/10.1109/drc46940.2019.9046434
Publikováno v:
Journal of Applied Physics. 127:065705
We investigate the channel length dependence of the electrical characteristics of chemical vapor transport (CVT)-grown MoS 2 nanoribbon (NR) Schottky barrier field-effect transistors to provide insights into the transport properties of such nanostruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2187b0285b98a42021a1f387d483d45d
https://doi.org/10.1063/1.5127769
https://doi.org/10.1063/1.5127769