Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Paolo Ghezzi"'
Autor:
D'ONOFRIO, ANDREA
Scheda bibliografica di un libro sulla storia di una delle figure principali della resistenza studentesca contro il nazionalsocialismo nel Terzo Reich: Sophie Scholl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3730::3208e4162ad9b6f54935d6e144c155e7
http://hdl.handle.net/11588/494606
http://hdl.handle.net/11588/494606
Autor:
Gianluca Giubilei, Riccardo Bartoletti, T. Tony Cai, Mauro Gacci, Giorgio Santelli, Paolo Ghezzi, Michele Sisani, Fabio Repetti, Stefano Nerozzi, Fabrizio Viggiani
Publikováno v:
Urology. 66:726-731
Objectives To determine the tolerability and efficacy after 1 year of weekly intravesical gemcitabine therapy in patients with intermediate-risk and high-risk superficial transitional cell carcinoma. Methods A total of 116 patients with intermediate-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c008b023aff176bc066fb99aad043a1
https://doi.org/10.1016/j.urology.2005.04.062
https://doi.org/10.1016/j.urology.2005.04.062
Autor:
Daniela Peschiaroli, Paola Zabberoni, Paolo Ghezzi, S. Niel, T. Ghilardi, Elisabetta Palumbo, P. Garofalo, Cesare Clementi, V. Lista, S. Soleri, G. Mastracchio, F. Pipia, T. Marangon, Alfonso Maurelli
Publikováno v:
Microelectronic Engineering. 55:137-143
System on chip development requires many different devices to be integrated on the same chip and a high compatibility between CMOS logic core process and added modules. The self-aligned silicide process coming from high performance logic gives in a F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d1af9c40b8c24a5c9225311efe813ef
https://doi.org/10.1016/s0167-9317(00)00439-1
https://doi.org/10.1016/s0167-9317(00)00439-1
Publikováno v:
ResearcherID
Despite the sizable achievements obtained, the use of soft classifiers is still limited by the lack of well-assessed and adequate methods for evaluating the accuracy of their outputs. This paper proposes a new method that uses the fuzzy set theory to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5948fb7afa7f2c27694afa222ded065
https://doi.org/10.1016/s0167-8655(99)00061-6
https://doi.org/10.1016/s0167-8655(99)00061-6
Publikováno v:
ResearcherID
We propose here a fuzzy hybrid methodology for the classification, conceived as a cognitive process, of remote sensing images. The salient aspect of the approach is the combined use of different techniques: the linear mixture model , a supervised fuz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd85a4a54430ca96b10c646218dcbbac
https://doi.org/10.1016/s0167-8655(96)00096-7
https://doi.org/10.1016/s0167-8655(96)00096-7
Autor:
Federico Pio, Constantin Papadas, Paolo Ghezzi, Gerard Ghibaudo, G. Pananakakis, Caterina Riva
Publikováno v:
IEEE Transactions on Electron Devices. 42:678-682
A model for the intrinsic retention characteristics of FLOTOX EEPROM cells is presented, which is based on the temperature dependence of the Fowler-Nordheim emission current. This model which has been successfully tested on single-poly-FLOTOX EEPROM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7bf210243f46e2571778a1716280243
https://doi.org/10.1109/16.372071
https://doi.org/10.1109/16.372071
Publikováno v:
Microelectronics Reliability. 33:1579-1596
The Exponentially Ramped Current Stress method (ERCS) is an accelerated test for wafer-level tunnel oxide evaluation and screening. In this work the technique is described and its advantages are discussed, with special attention to the comparison wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fc52b790c486b6340c5535887ad6929
https://doi.org/10.1016/0026-2714(93)90112-c
https://doi.org/10.1016/0026-2714(93)90112-c
Publikováno v:
Microelectronics Journal. 24:395-399
Comparison between endurance performance obtained on FLOTOX EEPROM cells with heavily doped poly-Si as floating gate electrode and heavily doped poly-Si overcoated with WSi 2 is presented. The poor endurance performance which has been obtained on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77291e3540ab20cc130d4834d43b4f80
https://doi.org/10.1016/0026-2692(93)90044-f
https://doi.org/10.1016/0026-2692(93)90044-f
Publikováno v:
Microelectronic Engineering. 15:621-624
A theoretical model explaining the programming window degradation as a function of the number of Write/Erase cycles in FLOTOX EEPROM cells is proposed. The collapsing of the programming window is quantitatively related to the oxide charge build-up in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fddaff46a5b3b2d94f96ecb6e354d64
https://doi.org/10.1016/0167-9317(91)90296-p
https://doi.org/10.1016/0167-9317(91)90296-p
Publikováno v:
Microelectronic Engineering. 15:117-120
The use of an Exponentially Ramped Current Stress as an accelerated method for wafer-level tunnel oxide reliability evaluation has already been proposed, [1,2]. This paper illustrates the wide range of dielectric parameters which can be obtained from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef673a6f91ebc1f7a5808dfd4ed93ea1
https://doi.org/10.1016/0167-9317(91)90194-i
https://doi.org/10.1016/0167-9317(91)90194-i