Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Paola Favia"'
Publikováno v:
PLoS Genetics, Vol 16, Iss 7, p e1008923 (2020)
Mitochondrial translation defects can be due to mutations affecting mitochondrial- or nuclear-encoded components. The number of known nuclear genes involved in mitochondrial translation has significantly increased in the past years. RCC1L (WBSCR16),
Externí odkaz:
https://doaj.org/article/2eb8ce9ad3ec4bdaaa9a99669d24020f
Autor:
Steven Folkersma, Janusz Bogdanowicz, Andreas Schulze, Paola Favia, Dirch H. Petersen, Ole Hansen, Henrik H. Henrichsen, Peter F. Nielsen, Lior Shiv, Wilfried Vandervorst
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1863-1867 (2018)
This paper demonstrates the development of a methodology using the micro four-point probe (μ4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling th
Externí odkaz:
https://doaj.org/article/c43578bdf7d8406791560c261f4f5b23
Autor:
Ravi Chandra Chintala, Sebastian Wood, James C. Blakesley, Paola Favia, Umberto Celano, Kristof Paredis, Wilfried Vandervorst, Fernando A. Castro
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025105-025105-6 (2019)
The 3D nanostructure of organic materials plays a key role in their performance in a broad range of fields, from life sciences to electronics. However, characterising the functionality of their morphologies presents a critical challenge requiring nan
Externí odkaz:
https://doaj.org/article/b7b7a2c388a24a2caf4097d05c9c514e
Autor:
Umberto Celano, Andres Gomez, Paola Piedimonte, Sabine Neumayer, Liam Collins, Mihaela Popovici, Karine Florent, Sean R. C. McMitchell, Paola Favia, Chris Drijbooms, Hugo Bender, Kristof Paredis, Luca Di Piazza, Stephen Jesse, Jan Van Houdt, Paul van der Heide
Publikováno v:
Nanomaterials, Vol 10, Iss 8, p 1576 (2020)
The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes o
Externí odkaz:
https://doaj.org/article/ad7caa6c7cc54dbabdff908aa25de20f
Autor:
Geoffrey Pourtois, Julien Ryckaert, Andriy Hikavyy, Alessio Spessot, Geert Eneman, Naoto Horiguchi, Philippe Matagne, Hiroaki Arimura, Roger Loo, An De Keersgieter, Paola Favia, Clement Porret, Anabela Veloso
Publikováno v:
IEEE Transactions on Electron Devices. 68:5380-5385
Stress simulations of Si0.5Ge0.5-channel nanowire transistors with typical 5 nm technology-node dimensions are performed to study the effect of layout on the channel stress generated by virtual substrates, by epitaxial mismatch from source/drain epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694d7b20ce41464793fc48ea71611d09
https://doi.org/10.1109/ted.2021.3076754
https://doi.org/10.1109/ted.2021.3076754
Autor:
Basoene Briggs, Roger Loo, Mustafa Ayyad, Manuel Mencarelli, Andriy Hikavyy, Clement Porret, Naoto Horiguchi, Robert Langer, Paola Favia
Publikováno v:
ECS Transactions. 104:139-146
This work reports on low temperature epitaxial growth solutions for the processing of advanced CMOS devices beyond the 3 nm technological node. The complex stacking of highly compositionally contrasted strained group IV materials is first demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a5001a4b87c213e0d6a74abc450b606
https://doi.org/10.1149/10404.0139ecst
https://doi.org/10.1149/10404.0139ecst
Autor:
S. Paolillo, Guillaume Boccardi, N. Jourdan, Manoj Jaysankar, Zheng Tao, Sylvain Baudot, Geert Mannaert, Juergen Boemmels, T. Hopf, E. Capogreco, Shouhua Wang, Efrain Altamirano, E. Dupuy, Olalla Varela Pedreira, B. Briggs, Thomas Chiarella, Joris Cousserier, Sofie Mertens, Romain Ritzenthaler, Frank Holsteyns, C. Lorant, Goutham Arutchelvan, Ingrid Demonie, Steven Demuynck, K. Kenis, Xiuju Zhou, Anshul Gupta, F. Sebai, D. Radisic, Zsolt Tokei, Erik Rosseel, A. Sepulveda, Naoto Horiguchi, Christel Drijbooms, Antony Premkumar Peter, Haroen Debruyn, Nouredine Rassoul, Bilal Chehab, P. Morin, Boon Teik Chan, Christopher J. Wilson, Katia Devriendt, Noemie Bontemps, Frederic Lazzarino, Paola Favia, Lieve Teugels, D. Yakimets, F. Schleicher, Houman Zahedmanesh, Jerome Mitard, Min-Soo Kim, An De Keersgieter, Sujith Subramanian, Kevin Vandersmissen, Hans Mertens, Eugenio Dentoni Litta, Yong Kong Siew
Publikováno v:
IEEE Transactions on Electron Devices. 67:5349-5354
Buried power rail (BPR) is a key scaling booster for CMOS extension beyond the 5-nm node. This work demonstrates, for the first time, the integration of tungsten (W) BPR lines with Si finFETs. BPR technology requires insertion of metal in the front-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c090ddf1ac756f7a1d162529a99308
https://doi.org/10.1109/ted.2020.3033510
https://doi.org/10.1109/ted.2020.3033510
Autor:
Roger Loo, Hugo Bender, Eddy Simoen, Philippe Matagne, Andriy Hikavyy, E. Vancoille, Anabela Veloso, Adrian Chasin, Paola Favia, Erik Rosseel
Publikováno v:
ECS Transactions. 97:59-64
Introduction. The Gate-All-Around (GAA) Nanowire (NW) or nanosheet (NS) architecture provides superior short-channel effects control and is widely considered as one of the most promising candidates to replace finFETs in advanced Logic technology node
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf16242387d8e22702611e6d5e17af9e
https://doi.org/10.1149/09705.0059ecst
https://doi.org/10.1149/09705.0059ecst
Autor:
Geoffrey Pourtois, Benjamin Groven, Ankit Nalin Mehta, Hugo Bender, Paola Favia, Matty Caymax, Wilfried Vandervorst, A. Dabral, Jiongjiong Mo
Publikováno v:
The Journal of Physical Chemistry C. 124:6472-6478
Grain boundaries between 60° rotated and twinned crystals constitute the dominant type of extended line defects in two-dimensional transition metal dichalcogenides (2D MX2) when grown on a single c...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe3bce3ae5b380dbd80068aa39d127cc
https://doi.org/10.1021/acs.jpcc.0c01468
https://doi.org/10.1021/acs.jpcc.0c01468
Autor:
Jeroen De Coster, Ewoud Vissers, S. A. Srinivasan, Marianna Pantouvaki, Dries Van Thourhout, Hugo Bender, Roger Loo, Clement Porret, Paola Favia, Joris Van Campenhout
Publikováno v:
IEEE Journal of Quantum Electronics. 56:1-7
We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (~350 nm) Ge/SiGe quantum well stacks grown on Si. We demonstrate an absorption contrast $\Delta \alpha /\alpha $ of 2.1 at 1 Vpp swing in QCSE stacks grown on ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bb6bb398ee57a58e18dcbe1a4782d5f
https://doi.org/10.1109/jqe.2019.2949640
https://doi.org/10.1109/jqe.2019.2949640