Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Pao-Sheng Lin"'
Autor:
PAO-SHENG LIN, 林寶昇
99
Furniture market in Taiwan has been significantly boosted due to the increasing needs of local real estate market; which has quickly recovered from the economic recession in 2008 and shown strong growth on all aspects since. As the furniture
Furniture market in Taiwan has been significantly boosted due to the increasing needs of local real estate market; which has quickly recovered from the economic recession in 2008 and shown strong growth on all aspects since. As the furniture
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/07961766589995742379
Publikováno v:
Semiconductors. 53:406-410
Unlike the conventional GaAs- and InP-based enhancement/depletion-mode (E/D-mode) transistors, the improved gate characteristics of the AlGaAs/InGaAs E-mode high electron mobility transistors (HEMTs) by way of hybrid gate recesses to remove the n-AlA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bf72f82add54a35851065dc73735c07
https://doi.org/10.1134/s1063782619030187
https://doi.org/10.1134/s1063782619030187
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q211-Q216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ea2665439bb2ce3a338c82645c4c84
https://doi.org/10.1149/2.0221910jss
https://doi.org/10.1149/2.0221910jss
Publikováno v:
Science of Advanced Materials. 10:651-654
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b5f7ba196332baf72e573073247229e
https://doi.org/10.1166/sam.2018.3140
https://doi.org/10.1166/sam.2018.3140
Publikováno v:
Science of Advanced Materials. 10:632-635
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03764bbb790e7e4bd7eef4edf5f89bf7
https://doi.org/10.1166/sam.2018.3136
https://doi.org/10.1166/sam.2018.3136
Publikováno v:
Applied Surface Science. 432:224-227
In this article, the Pd-based mixture comprising silicon dioxide (SiO 2 ) is applied as sensing material for the InGaP/InGaAs field-effect transistor typed hydrogen sensor. After wet selectively etching the SiO 2 , the mixture is turned into Pd nanop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19acba9107bcaa63ccb4bdb707f687cd
https://doi.org/10.1016/j.apsusc.2017.03.246
https://doi.org/10.1016/j.apsusc.2017.03.246
Publikováno v:
Superlattices and Microstructures. 110:171-179
The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transpar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25474a5928bffbe91b687eb206407ca5
https://doi.org/10.1016/j.spmi.2017.08.047
https://doi.org/10.1016/j.spmi.2017.08.047
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:R149-R153
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88a0b0d07309ab629cbdc75ec4a0bdb
https://doi.org/10.1149/2.0231709jss
https://doi.org/10.1149/2.0231709jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:055019
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f55d0670793fe3895823b9acc248fcf0
https://doi.org/10.1149/2162-8777/ab9b03
https://doi.org/10.1149/2162-8777/ab9b03
Publikováno v:
ECS Journal of Solid State Science & Technology; 2020, Vol. 9 Issue 5, p1-4, 4p