Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Pao-Nan Lee"'
Autor:
Pao-Nan Lee, 李寶南
管理學院工業工程與管理EMBA專班
100
Now a day,the enterprises in Taiwan are facing economic recession、factories moved outward、high production cost、shorter product life cycle、larger customization and global fierce competi
100
Now a day,the enterprises in Taiwan are facing economic recession、factories moved outward、high production cost、shorter product life cycle、larger customization and global fierce competi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/vn8wru
Autor:
Pao-Nan Lee, 李寶男
95
This thesis proposes a new bandpass filter prototype modified based on T-type coupled resonator architecture by considering the parasitic shunt capacitance effect. After derivation, the new prototype can be proved equivalent to third-order Ch
This thesis proposes a new bandpass filter prototype modified based on T-type coupled resonator architecture by considering the parasitic shunt capacitance effect. After derivation, the new prototype can be proved equivalent to third-order Ch
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/z9yngm
Autor:
Cheng-Yuan Kung, Hung-Yi Lin, Chin-Cheng Kuo, Cheng-Syuan Wu, Yu-Ting Chen, Meng-Wei Hsieh, Yu-Chang Hsieh, Pao-Nan Lee
Publikováno v:
2022 17th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).
Autor:
Pao-Nan Lee, Yu-Chang Hsieh, Hung-Lun Lo, Chang-Ho Li, Fan-Hsiu Huang, James Lin, Wei-Chu Hsu, Chen-Chao Wang
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
Inter-digital and hairpin mmWave diplexer design and simulation based on two types technology: fan-out structure and build-up substrate for n257/n258 and n260 bands in 5G new radio (NR) are demonstrated in this paper. Fan-out structure has advantage
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
Band pass filter design based on glass integrated passive device (IPD) technology for n77 and n79 bands in 5G new radio (NR) is demonstrated in this paper. The pass band loss for n77 filter is only 1.4dB from 3.3 to 4.2 GHz, and the attenuation at 2.
Autor:
Thomas Wang, Pao-Nan Lee, Wei-Yu Nien, Shu-Ting Yang, Harrison Chang, Sidney Huang, Chi-Hao Chiang, CT Lee
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
The high power computing for AI and Data Centers are advancing rapidly and power efficiency becomes critical. Ways of power integration are being explored, with inductor being one of the most challenging topics. Embedding inductor in organic substrat
Publikováno v:
2019 IEEE 21st Electronics Packaging Technology Conference (EPTC).
An ultra-low profile power inductor solution with wafer level package has been demonstrated. The proposed power inductor is formed by high aspect ratio Cu pillar with embed high permeability bulk magnetic material. By adding proper bulk magnetic mate
Publikováno v:
2018 7th Electronic System-Integration Technology Conference (ESTC).
In this paper, a high quality factor 3D-inductor has been demonstrated by 3D-IPD solutionwith tall Cu pillar. It can achieve $\sim7$:1 aspect ratio vertical connection without expensive TSV or TGV process, and meet the demand of high quality value wa
Autor:
Chen Chien-Hua, Chen-Chao Wang, Shiuan-Yu Lin, Pao-Nan Lee, Cheng-Yuan Kung, Yu-Chang Hsieh, Teck Chong Lee, Lin Hung-Yi
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
In this paper, a novel high performance 3D-IPD (Integrated Passive Devices) solution has been demonstrated by 2 RDL combined with the key element - tall Cu pillar. It doesn't required expensive TSV or TGV process to achieve the 3.5~7 aspect ratio ver