Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Pao-Chuan Shih"'
Autor:
Pao-Chuan Shih, 施保全
105
Tunneling field-effect transistor is a promising candidate for the nextgeneration digital switch due to the steep subthreshold slope (SS) of sub-60 mV/decade. Since the small drive current is still an issue for group IV TFETs, due to the sma
Tunneling field-effect transistor is a promising candidate for the nextgeneration digital switch due to the steep subthreshold slope (SS) of sub-60 mV/decade. Since the small drive current is still an issue for group IV TFETs, due to the sma
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/79567521259975104511
Autor:
Pao-Chuan Shih, Girish Rughoobur, Zachary Engel, Habib Ahmad, William Alan Doolittle, Akintunde I. Akinwande, Tomas Palacios
Publikováno v:
IEEE Electron Device Letters. 43:1351-1354
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ba4686180e1cb90f37ef49afcda2dc
https://doi.org/10.1109/led.2022.3184996
https://doi.org/10.1109/led.2022.3184996
Publikováno v:
IEEE Transactions on Electron Devices. 68:3748-3754
InAs/GaSb heterojunction Esaki diodes with a high peak current density of 9 MA/cm2 are demonstrated. Negative differential resistance (NDR) is achieved from 300 to 4 K, showing that band-to-band tunneling (BTBT) is the dominant transport mechanism. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::061bfa1f4f79e69f6b05e7fb148f9cc2
https://doi.org/10.1109/ted.2021.3086086
https://doi.org/10.1109/ted.2021.3086086
Publikováno v:
IEEE Electron Device Letters. 42:422-425
Field emitters are attracting much attention recently because of their potential for high-frequency and harsh-environment applications. Although silicon is the most studied semiconductor for field emitters, III-Nitrides are also very promising thanks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ad98a19848ba2e72bb1506f2815d9af
https://doi.org/10.1109/led.2021.3052715
https://doi.org/10.1109/led.2021.3052715
Publikováno v:
Journal of Applied Physics. 132:165701
This work presents a theoretical analysis of the impact of surface states on vacuum field emission currents in semiconductors. In wide and ultra-wide bandgap semiconductors such as GaN and AlGaN, low electron affinity has been proposed as a benefit f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570f7eecb5f7910fdbd70473cfe5febe
https://doi.org/10.1063/5.0105657
https://doi.org/10.1063/5.0105657
Autor:
Peng Xiang, Girish Rughoobur, Pao-Chuan Shih, Kai Liu, Tomas Palacios, Akintunde I. Akinwande, Kai Cheng
Publikováno v:
DRC
Electron devices based on field emitters (FE) are promising for harsh-environments and high-frequency electronics thanks to their radiation hardness and scattering-free electron transport. Si field emitters with a sub-10 nm tip radius and self-aligne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66c2c1b7d0c6777a158209063358d5e
https://doi.org/10.1109/drc50226.2020.9135161
https://doi.org/10.1109/drc50226.2020.9135161
Publikováno v:
Applied Physics Letters. 120:022101
Many advanced III-nitride devices, such as micro-LEDs, vertical FinFETs, and field emitters, require the fabrication of high aspect ratio vertical pillars or nanowires. Two-step etchings combining dry and wet etching steps have been used on vertical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b32af1cfeb7fe164b08fba5f484828f
https://doi.org/10.1063/5.0074443
https://doi.org/10.1063/5.0074443
Publikováno v:
2017 Silicon Nanoelectronics Workshop (SNW).
We propose a novel vertical tunnel FET of band-to-band tunneling aligned with the gate electric field. Simulation results show high drive current and extremely sharp subthreshold swing due to excellent gate control over the tunnel junction. OFF state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b57f4c9093a515df842f43abd1cd75b6
https://doi.org/10.23919/snw.2017.8242291
https://doi.org/10.23919/snw.2017.8242291
Autor:
Yen Chuang, Po-Yuan Chiu, Ching-Tsung Huang, Pao-Chuan Shih, Chia-You Liu, Guang-Li Luo, Jiun-Yun Li
Publikováno v:
ECS Meeting Abstracts. :868-868
High-mobility channel materials are important to extend the CMOS technology to beyond 3-nm node. GeSn p-MOSFETs with a record-high hole mobility of 845 cm2/V-s and a high drive current of > 1850 A/m were demonstrated [1, 2]. While the high-performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f4d60ea7276d239a6ebdc0a0149e58
https://doi.org/10.1149/ma2019-02/13/868
https://doi.org/10.1149/ma2019-02/13/868